Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Byung Gu Gyun"'
Autor:
Tae Jung Ha, Kyung Wan Kim, Joo Young Moon, Jong Chul Lee, Jong-Ho Lee, Jin Kook Kim, Young Seok Ko, Woo Young Park, Byung Gu Gyun, Jae-yeon Lee, Soo Gil Kim, Yong Taek Park, Bo Mi Lee, Byoung-Ki Lee, Wonki Ju
Publikováno v:
Solid-State Electronics. 156:87-91
To develop a high voltage read margin ΔVrd, deep reset engineering and defect engineering are proposed. To realize the defect engineering, the amount of oxygen vacancy of the resistor was controlled by optimizing the material of the reservoir (RSV)
Autor:
Joo Young Moon, Jong Chul Lee, Sung-Joo Hong, Jae-yeon Lee, Jong-Ho Lee, Byoung-Ki Lee, Byung Gu Gyun, Won Ki Ju, Kyung Wan Kim, Young Seok Ko, Donggyu Yim, Bo Mi Lee, Hyun Mi Hwang, Woo Young Park, Soo Gil Kim, Tae Jung Ha, Yong Taek Park
Publikováno v:
2017 IEEE International Electron Devices Meeting (IEDM).
In this paper, the authors report for the first time the outstanding selector performance from an innovative oxide selector. SiO2, one of conventional and common materials in semiconductor industry, was chosen as a matrix oxide material. Metal atoms
Autor:
Sook Joo Kim, Jung Nam Kim, Byung Gu Gyun, Jong Hee Yoo, Wan Gee Kim, Sung Ki Park, Jun Young Byun, Moon Sig Joo, Jae Sung Roh, Taeh Wan Kim, Min Gyu Sung, Won Kim
Publikováno v:
2011 International Reliability Physics Symposium.
We measured direct physical evidence that can explain different switching behaviors for HfO 2 based ReRAM structure for the first time. The switching behavior depends on the degree of crystallinity of HfO 2 . We observed crystallized HfO 2 which is g
Autor:
J. Y. Byun, Sung-Hyung Park, Moon-Sig Joo, Byung Gu Gyun, Min Gyu Sung, J. N. Kim, S. J. Kim, J. H. Yoo, Jae-Sung Roh, J. Y. Kim, W. G. Kim
Publikováno v:
Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials.
Autor:
Chi Ho Kim, Jun Young Byun, Won Kim, Sung Joon Yoon, Jong Hee Yoo, Byung Gu Gyun, Jang Won Oh, Te One Youn, Taeh Wan Kim, Wan Gee Kim, Sook Joo Kim, Ho Joung Kim, Jiwon Moon, Min Gyu Sung, Jae Sung Roh, Jung Nam Kim, Sung Ki Park, Moon Sig Joo, Ja Yong Kim
Publikováno v:
2010 Proceedings of the European Solid State Device Research Conference.
In this paper, a systematic approach using HfO 2 , ZrO 2 and TiO 2 with TiN or Ti/TiN electrode has been conducted to research the best material for ReRAM device integration. From the experimental results and proposed model, the proper electrical pro
Autor:
Jung Nam Kim, Sung Ki Park, Moon Sig Joo, Wan Gee Kim, Won Kim, Min Gyu Sung, Jang Won Oh, Taeh Wan Kim, Byung Gu Gyun, Sook Joo Kim, Chi Ho Kim, Jong Hee Yoo, Te One Youn, Jae Sung Roh, Jun Young Byun
Publikováno v:
Journal of The Electrochemical Society. 158:H417
Autor:
Wan Gee Kim, Jung Nam Kim, Jun Young Byun, Sung Ki Park, Moon Sig Joo, Jang Won Oh, Won Kim, Taeh Wan Kim, Byung Gu Gyun, Jae Sung Roh, Jong Hee Yoo, Sook Joo Kim, Chi Ho Kim, Te One Youn, Min Gyu Sung
Publikováno v:
Journal of The Electrochemical Society. 158:S12
Autor:
Wan Gee Kim, Min Gyu Sung, Sook Joo Kim, Ja Yong Kim, Ji Won Moon, Sung Joon Yoon, Jung Nam Kim, Byung Gu Gyun, Taeh Wan Kim, Chi Ho Kim, Jun Young Byun, Won Kim, Te One Youn, Jong Hee Yoo, Jang Won Oh, Ho Joung Kim, Moon Sig Joo, Jae Sung Roh, Sung Ki Park
Publikováno v:
2010 Proceedings of the European Solid-State Device Research Conference (ESSDERC); 2010, p400-403, 4p
Autor:
Wan Gee Kim, Min Gyu Sung, Sook Joo Kim, Jong Hee Yoo, Te One Youn, Jang Won Oh, Jung Nam Kim, Byung Gu Gyun, Taeh Wan Kim, Chi Ho Kim, Jun Young Byun, Won Kim, Moon Sig Joo, Jae Sung Roh, Park, Sung Ki
Publikováno v:
Journal of The Electrochemical Society; 2011, Vol. 158 Issue 4, pH417-H422, 6p
Autor:
Wan Gee Kim, Min Gyu Sung, Sook Joo Kim, Jong Hee Yoo, Te One Youn, Jang Won Oh, Jung Nam Kim, Byung Gu Gyun, Taeh Wan Kim, Chi Ho Kim, Jun Young Byun, Won Kim, Moon Sig Joo, Jae Sung Roh, Park, Sung Ki
Publikováno v:
Journal of The Electrochemical Society; 2011, Vol. 158 Issue 4, pH417-H422, 6p