Zobrazeno 1 - 10
of 46
pro vyhledávání: '"Byounghak Lee"'
Autor:
Marton Voros, Seonghoon Jin, Dae Sin Kim, Woosung Choi, Yong-Hee Park, Kantawong Vuttivorakulchai, Uihui Kwon, Mohammad Ali Pourghaderi, Byounghak Lee
Publikováno v:
2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
A novel algorithm is introduced to extract the electrical roughness at the first principle level. The autocorrelation and root-mean-squared height of roughness spectrum are extracted for 3×3 nm2 Si/SiO 2 samples. As an application, the impact of Ge-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7309c01dbd04466845bfe4e015b87f71
https://doi.org/10.1109/sispad54002.2021.9592577
https://doi.org/10.1109/sispad54002.2021.9592577
Publikováno v:
Archives of Design Research. 31:111-122
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c416658a32aa7e0d3ec55db9eed5b916
https://doi.org/10.15187/adr.2018.02.31.1.111
https://doi.org/10.15187/adr.2018.02.31.1.111
Autor:
Byounghak Lee, Takeshi Nishimatsu, Kiyoshi Ishikawa, Inkook Jang, Yasuyuki Kayama, Dae Sin Kim, Anthony Payet, Alexander Schmidt
Publikováno v:
2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
A new dynamical space partitioning method is presented in a parallelized lattice kinetic Monte Carlo (kMC) simulator to overcome the loss of parallel efficiency found in other parallelized kMC simulators. The dynamical partitioning of the simulation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a0e643ecb40c56d71a752f423c74a6f
https://doi.org/10.1109/sispad.2018.8551663
https://doi.org/10.1109/sispad.2018.8551663
Autor:
Shafiqur Rahman, Manuel Caro, Javad R. Gatabi, Byounghak Lee, Kevin Lyon, J.S. Rojas-Ramirez, Ravi Droopad, Joelson Cott-Garcia
Publikováno v:
Microelectronic Engineering. 147:117-121
Display Omitted Single crystal ferroelectric oxides deposited GaAs.Molecular beam epitaxy of crystalline SrTiO3 and BaTiO3 on GaAs.Crystalline PZT was deposited on STO/Si and STO/GaAs using solution spin coating.DFT calculations were used to determin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e19f7c862910243a55cb5840a54886f1
https://doi.org/10.1016/j.mee.2015.04.050
https://doi.org/10.1016/j.mee.2015.04.050
Publikováno v:
Science of Advanced Materials. 6:703-713
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a213fec19e5b3f3c49e7a3eebb8c2ce0
https://doi.org/10.1166/sam.2014.1759
https://doi.org/10.1166/sam.2014.1759
Autor:
Liang Fang, Jeong Young Park, Yi Cui, Alivisatos, Paul, Shcrier, Joshua, Byounghak Lee, Lin-Wang Wang, Salmeron, Miquel
Publikováno v:
Journal of Chemical Physics; 11/14/2007, Vol. 127 Issue 18, p184704, 6p, 1 Black and White Photograph, 1 Diagram, 5 Graphs
Autor:
Jongho Park, Byounghak Lee
Publikováno v:
Transactions of the Korean Society for Noise and Vibration Engineering. 23:895-901
Last blades of LP turbine in nuclear power plant are the highly damaged part and suffered from nozzle steam impulses during the turbine operation. Nozzle impulse is known as a common cause of damage or failure in the turbine blade and results from st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ec969d6fd52834c73166ac2e52ac9e5
https://doi.org/10.5050/ksnve.2013.23.10.895
https://doi.org/10.5050/ksnve.2013.23.10.895
Autor:
Xi Sung Loo, Josef S. Watts, Bhoopendra Singh, Uwe Kahler, Michael Cheng, Murali Kota, S.N. Ong, Ralf Illgen, Maciej Wiatr, Byounghak Lee, Christoph Schwan, Oscar D. Restrepo, Kok Wai Johnny Chew, W.H. Chow, Andreas Huschka
Publikováno v:
2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC).
We report experimental improvement of both RF and digital AC performance of a 28nm CMOS technology by predoping the gate poly. The results are explained in terms of the physical structure of the gate and the atomic structure of the gate TiN/Si interf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b799208fef030eaf8d57299df22955b
https://doi.org/10.1109/rfic.2016.7508264
https://doi.org/10.1109/rfic.2016.7508264
Publikováno v:
ACM Transactions on Mathematical Software. 36:1-35
We describe the design and implementation of KSSOLV, a MATLAB toolbox for solving a class of nonlinear eigenvalue problems known as the Kohn-Sham equations . These types of problems arise in electronic structure calculations, which are nowadays essen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e649436b534aa5b1e390d881b20fe0e
https://doi.org/10.1145/1499096.1499099
https://doi.org/10.1145/1499096.1499099
Publikováno v:
2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
Interface morphology dependent Schottky Barrier Height (SBH) and its modulation by substitutional dopants in NiSi 2 /Si interface have been investigated using density functional theory. An accurate band gap of Si was estimated by employing meta-GGA e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40c69d5dd0315a26618d384868c65fe9
https://doi.org/10.1109/sispad.2015.7292300
https://doi.org/10.1109/sispad.2015.7292300