Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Byoungchul Park"'
Autor:
Seongjae Lee, In-Bok Baek, Myung-Sim Jeon, Chel-Jong Choi, Moongyu Jang, Byoungchul Park, Yarkyeon Kim
Publikováno v:
IEEE Transactions on Electron Devices. 53:1821-1825
Schottky-barrier (SB) heights of erbium and platinum silicides are evaluated using current-voltage and capacitance-voltage methods in the Schottky diodes. For the erbium-silicided Schottky diodes, the extracted SB heights show big differences dependi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd777e8c017cba276db1e81a816f2b4b
https://doi.org/10.1109/ted.2006.876575
https://doi.org/10.1109/ted.2006.876575
Autor:
Hyundoek Yang, Byoungchul Park, Chel-Jong Choi, Hyunsang Hwang, Tae-Youb Kim, Ranju Jung, Myungsim Jun, Moongyu Jang, Seongjae Lee, Man Chang, Yarkyueon Kim
Publikováno v:
Japanese Journal of Applied Physics. 46:125-127
We have investigated the effect of high-pressure hydrogen postannealing (HPHA) on the effective metal work function (Φm,eff) of a Pt–Er alloy metal gate on a HfO2 film. By considering the presence of an interfacial layer (IL) between the HfO2 film
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::021bc09cb1d63e2f0059926dc4bd3608
https://doi.org/10.1143/jjap.46.125
https://doi.org/10.1143/jjap.46.125
Publikováno v:
Japanese Journal of Applied Physics. 45:730-732
Erbium-silicided 50-nm-gate-length n-type Schottky barrier metal–oxide–semiconductor field-effect transistors (SB-MOSFETs) with a 5 nm gate oxide thickness are manufactured. Their on/off-current ratio is higher than 105 with low leakage current l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b57d894c0b3369c0c46ac7151b9e2522
https://doi.org/10.1143/jjap.45.730
https://doi.org/10.1143/jjap.45.730
Autor:
Byoungchul Park, SungYoung Lee, Dong-Ryul Chang, Kee-In Bang, Sung-Jun Kim, Sang-Bae Yi, Eun-Seung Jung
Publikováno v:
ECS Meeting Abstracts. :1863-1863
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dcf579c2d46f282d029575ab40f634ef
https://doi.org/10.1149/ma2008-02/23/1863
https://doi.org/10.1149/ma2008-02/23/1863
Autor:
Byoungchul Park, Myungsim Jun, Yarkyeon Kim, Tae-Youb Kim, Moongyu Jang, Hi-Deok Lee, Chel-Jong Choi, Seongjae Lee
Publikováno v:
Journal of the Korean Physical Society. 50:893
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::996d43d7e828c011e490c5cf571e26e9
https://doi.org/10.3938/jkps.50.893
https://doi.org/10.3938/jkps.50.893
Autor:
Ranju Jung, Hyundoek Yang, Chel-Jong Choi, Man Chang, Myung-Sim Jeon, Moongyu Jang, Yarkyeon Kim, Byoungchul Park, Seongjae Lee, Hyunsang Hwang
Publikováno v:
Electrochemical and Solid-State Letters. 9:G228
High-pressure hydrogen postannealing effects on the electrical and structural properties of the Pt-Er alloy metal gate on HfO 2 film have been investigated. It is shown that high-pressure hydrogen postannealing causes the removal of microvoids formed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56aef46b1c1b5211c8acf5f9fc642185
https://doi.org/10.1149/1.2197968
https://doi.org/10.1149/1.2197968
Autor:
Moongyu Jang, Yarkyeon Kim, Myungsim Jeon, Cheijong Choi, Inbok Baek, Seongjae Lee, Byoungchul Park
Publikováno v:
IEEE Transactions on Electron Devices; Aug2006, Vol. 53 Issue 8, p1821-1825, 5p, 7 Graphs