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of 3
pro vyhledávání: '"ByoungHak Hong"'
Autor:
Gyo-Young Jin, Kyoung Hwan Yeo, SeongJoo Lee, Donggun Park, Sungwoo Hwang, Dong-Won Kim, ByoungHak Hong, Keun Hwi Cho
Publikováno v:
JSTS:Journal of Semiconductor Technology and Science. 11:80-87
Low temperature hole transport characteristics of gate-all-around p-channel metal oxide semiconductor (PMOS) type silicon nanowire fieldeffect-transistors with the radius of 5 ㎚ and lengths of 44-46 ㎚ are presented. They show coexisting two singl
Autor:
Dong-Won Kim, Sungwoo Hwang, Duck Kyoon Ahn, M H Son, ByoungHak Hong, Y. Y. Lee, Donggun Park, Young Chai Jung, Kyoung-hwan Yeo, Luryi Choi, Sang-Hun Song, Keun Hwi Cho, Gyo Young Jin
Publikováno v:
IEEE Transactions on Nanotechnology. 9:754-758
We report the random telegraph noise observed in gate-all-around (GAA) PMOS silicon nanowire FETs (SNWFETs) with the radius of 5 nm, at various temperatures (s) down to 4.2 K. From the -dependence of the capture/emission time, we obtain the energy an
Autor:
Young Chai Jung, ByoungHak Hong, Sung-young Lee, Duck Kyoon Ahn, Keun Hwi Cho, SuHeon Hong, Sungwoo Hwang, Min-Sang Kimc, Donggun Park, Dong-Won Kim, Eun-Jung Yoon
Publikováno v:
2007 International Semiconductor Device Research Symposium.
Recently, having vertically stacked arrays of 3D channels, multi-bridge-channel MOSFETs (MBCFETs) have been fabricated successfully (Lee et al., 2003). In this paper, we report temperature dependent transport characteristics of the MBCFET.