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pro vyhledávání: '"Byoung-Woon Ahn"'
Autor:
Su-Been Yoo, Seong-Hun Yun, Ah-Jin Jo, Sang-Joon Cho, Haneol Cho, Jun-Ho Lee, Byoung-Woon Ahn
Publikováno v:
Applied Microscopy, Vol 52, Iss 1, Pp 1-8 (2022)
Abstract As semiconductor device architecture develops, from planar field-effect transistors (FET) to FinFET and gate-all-around (GAA), there is an increased need to measure 3D structure sidewalls precisely. Here, we present a 3-Dimensional Atomic Fo
Externí odkaz:
https://doaj.org/article/9a783280446a421caff3782f32780d03
Autor:
Su-Been Yoo, Seong-Hun Yun, Ah-Jin Jo, Jun-Ho Lee, Sang-Joon Cho, Haneol Cho, Byoung-Woon Ahn
As the semiconductor device architecture develops, from planar field-effect transistor (FET) to FinFET and toward gate all around (GAA), it is more needed to measure 3D structure sidewall precisely. Here, we present a 3D-atomic force microscopy (3D-A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fab4f4334008871b5f3a1eb25b4310f0
https://doi.org/10.21203/rs.3.rs-1148018/v1
https://doi.org/10.21203/rs.3.rs-1148018/v1
Autor:
Ahjin Jo, Sebastian W. Schmidt, Ju Suk Lee, Ardavan Zandiatashbar, Sang-il Park, Tom Vanderwayer, Bernd Irmer, Tae-Gon Kim, Sang-Joon Cho, Byoung-Woon Ahn, Soon-Wook Kim
Publikováno v:
2017 28th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
We demonstrated fully automated in-line atomic force microscopy (AFM) for local height variation monitoring solution. Two use cases, which are local variation of SADP Fin height and oxide recess height in Fin reveal process and that of Cu nail protru
Autor:
Yoomin Ahn, Nahm Gyoo Cho, Seoung Hwan Lee, Jae-jun Park, Byoung Woon Ahn, Dae Jin Kim, Seung Yong Hwang
Publikováno v:
Key Engineering Materials. :1371-1374
In this paper, an electrical signal detection system for microbiochips is proposed to overcome the limitations of conventional optical systems such as bulky system size and high manufacturing cost. An electrical detection system with interdigitated m