Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Byoung-Jun Cho"'
Autor:
Heon-Yul Ryu, Yutaka Wada, Nagendra Prasad Yerriboina, Chan-Hee Lee, Jun-Kil Hwang, Jin-Goo Park, Hirokuni Hiyama, Byoung-Jun Cho, Satomi Hamada
Publikováno v:
ECS Journal of Solid State Science and Technology. 8:P3058-P3062
This research was supported by Ansan-Si hidden champion fostering and supporting project funded by Ansan city.
Publikováno v:
Tribology International. 120:203-209
In this study, a sapphire lapping plate was fabricated using a unique blend of copper (Cu) metal particles and resin to overcome the drawbacks of traditional iron (Fe) and Cu plate lapping. An optimum Cu-resin ratio was found by evaluating the MRR, s
Publikováno v:
Applied Surface Science. 384:505-510
The effect of Cu surface conditions on Cu-BTA complex formation was investigated using contact angle, electrochemical impedance spectroscopy, spectroscopic ellipsometry and XPS measurements which is of interest to Cu Chemical Mechanical Planarization
Autor:
Jin-Yong Kim, Byoung-Jun Cho, Min-Su Kim, Gun-Ho Park, Hyun-Tae Kim, Jung-Hwan Lee, Jin-Goo Park
Publikováno v:
ECS Transactions. 69:69-75
The RCA cleaning process is a standard wet cleaning process for removal of contaminants from silicon wafer surface. As well known, the SC1 cleaning solution which consists of a mixture of NH4OH (ammonium hydroxide), H2O2 (hydrogen peroxide) and H2O i
Publikováno v:
Wear. :794-799
Lapping for sapphire substrates was evaluated with respect to material removal modes. Firstly, a 3-body removal mode that consists of diamond slurry and a metal–resin platen was tested. The metal–resin platen was produced by mixing metal particle
Publikováno v:
Solid State Phenomena. 219:205-208
Although copper have better electrical properties than aluminum such as low resistivity and high electro-migration resistivity, aluminum has been used as an interconnect material due to the difficulty in Cu dry etching. Since CMP process has been ada
Publikováno v:
Microelectronic Engineering. 122:33-39
Copper surfaces can become contaminated by slurry particles and organic residues during chemical mechanical planarization (CMP). Silica particles are widely used as abrasives, while benzotriazole (BTA) is widely used as corrosion inhibitor, in copper
Autor:
Chang-ki Hong, R. Prasanna Venktesh, Hyuk-Min Kim, Jin-Goo Park, Byoung-Jun Cho, Tae-Young Kwon, Manivannan Ramachandran
Publikováno v:
Tribology Transactions. 57:190-197
In the silicon dioxide chemical–mechanical polishing (CMP) process, one of the most challenging issues is the formation of defects such as scratches. In this study, scratch formation behavior and CMP performance were evaluated on high-density plasm
Publikováno v:
Tribology International. 67:272-277
The effects of pad surface roughness and debris induced by various types of diamond conditioners during the chemical mechanical planarization (CMP) process and their scratch forming behaviors were evaluated. Five types of conditioners having differen
Publikováno v:
Wear. 302:1334-1339
Glass ceramics are one of the important materials for optoelectronic devices. Fixed abrasive, double-sided lapping parameters (time, pressure, and platen speed) were optimized using borofloat, BK7 and quartz substrates. Lapping of borofloat, BK7 and