Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Byoung-Chul Jun"'
Publikováno v:
Journal of The Korean Institute of Defense Technology. 2:001-008
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4888e6fefc366daa9c5d5e5d26700e0e
https://doi.org/10.52682/jkidt.2020.2.4.001
https://doi.org/10.52682/jkidt.2020.2.4.001
Autor:
Sanghoon Kim, Ho-Sang Kwon, Byoung-Chul Jun, Gil-Wong Choi, Jong-Hun Jung, Sang Min Lee, Ho-Yeun Lee, Pyung-Soon Im, Dong-Wook Kim
Publikováno v:
The Journal of Korean Institute of Electromagnetic Engineering and Science. 31:584-587
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::044d203e2610e508541997e86a23b6da
https://doi.org/10.5515/kjkiees.2020.31.7.584
https://doi.org/10.5515/kjkiees.2020.31.7.584
Publikováno v:
Journal of the Korea Institute of Information and Communication Engineering. 20:2417-2424
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ea81f49c0e3a64f5738650cdb6a02cf
https://doi.org/10.6109/jkiice.2016.20.12.2417
https://doi.org/10.6109/jkiice.2016.20.12.2417
Autor:
Youn-Kook Jung, Byoung-Chul Jun, Haecheon Kim, Chul-Won Ju, Seong-Il Kim, Dong Min Kang, Hokyun Ahn, Byoung-Gue Min, Kyu-Jun Cho, Hyung Sup Yoon, Jongmin Lee, Jong-Won Lim, Sang-Heung Lee
Publikováno v:
Journal of the Korean Physical Society. 67:718-722
SiC substrates and GaN/AlGaN epitaxial layers were etched by using an inductively-coupled plasma (ICP) in order to electrically connect the backside metal to the source electrode pads on the front-side of an AlGaN/GaN high-electron-mobility transisto
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a2d2f5cf0f281aa5fe1b3bad926285a
https://doi.org/10.3938/jkps.67.718
https://doi.org/10.3938/jkps.67.718
Autor:
Byoung-Chul Jun, Hwejong Kim, Jinman Jin, Ho-Sang Kwon, Yongkwan Kim, Sangmin Lee, Sungjae Ha, Min Han, Youn-Kook Jung, Kwanjin Oh, Inseop Seo, Seokgyu Choi, Hyeyoung Jung
Publikováno v:
2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT).
This report describes recent progresses in development and production of GaN HEMT based power amplifiers in Wavice Inc., such as discrete transistors, s-band internally matched packaged transistors, 5W 3.5 GHz Doherty amplifiers, S-band Tx module and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22520f16e82cc4bce905f29d60cc8be8
https://doi.org/10.1109/rfit.2017.8048090
https://doi.org/10.1109/rfit.2017.8048090
Small-signal modeling approach to 0.1-μm metamorphic HEMTs for W-band coplanar MMIC amplifier design
Publikováno v:
Current Applied Physics. 12:81-88
We present an accurate and reliable modeling method for designing the W-band (75–110 GHz) small-signal millimeter-wave monolithic integrated circuit (MMIC) amplifiers with the GaAs-based 0.1-μm metamorphic high electron-mobility transistors (MHEMT
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01f5ca223b7cadb89d11d0faa4803ab1
https://doi.org/10.1016/j.cap.2011.04.046
https://doi.org/10.1016/j.cap.2011.04.046
Publikováno v:
Current Applied Physics. 10:395-400
This paper presents a 94 GHz monolithic down-converter with low conversion loss and high local oscillator (LO)-to-RF isolation using the 0.1 μm T-gate metamorphic high electron-mobility transistor (MHEMT) technology. The down-converter consists of a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0658328000d33c7cc1e2770ad99ee432
https://doi.org/10.1016/j.cap.2009.06.036
https://doi.org/10.1016/j.cap.2009.06.036
Autor:
Jin-Koo Rhee, Jae-Seo Lee, Byoung-Chul Jun, Sung-Woon Moon, Min Han, Jung-Hun Oh, Sang-Jin Lee, Sam-Dong Kim
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 57:1487-1493
We investigate the effects of a multigate-feeding structure on the gate resistance (Rg) and RF characteristics of the high electron-mobility transistors (HEMTs). In this structure, the increase of Rg with the gatewidth (W) is minimized; therefore, hi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37a61d6bfac683e6fae26ceb54cfb662
https://doi.org/10.1109/tmtt.2009.2020671
https://doi.org/10.1109/tmtt.2009.2020671
Publikováno v:
Journal of Microelectromechanical Systems. 15:1605-1611
In this paper, we report a novel radio-frequency (RF) microelectromechanical systems switch with low-actuation voltage and long lifetime by adopting a design approach in which a freely moving contact pad structure opens and closes the switch through
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5dc65bfc63c4e24d230224eb70d5965
https://doi.org/10.1109/jmems.2006.886394
https://doi.org/10.1109/jmems.2006.886394
Publikováno v:
IEEE Microwave and Wireless Components Letters. 15:856-858
We report a novel pull-up type radio frequency (RF) microelectromechanical system (MEMS) switch with no elastic deformation of the cantilever involved in the actuation. At a voltage of 4.5V, reliable actuations are achieved such that the movable lowe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76327567dbf93ac38865638032710bcb
https://doi.org/10.1109/lmwc.2005.860006
https://doi.org/10.1109/lmwc.2005.860006