Zobrazeno 1 - 10
of 49
pro vyhledávání: '"Byoung Hee Moon"'
Autor:
Byoung Hee Moon, Jung Jun Bae, Min-Kyu Joo, Homin Choi, Gang Hee Han, Hanjo Lim, Young Hee Lee
Publikováno v:
Nature Communications, Vol 9, Iss 1, Pp 1-8 (2018)
The interplay between strong interactions and presence of disorder makes atomically thin transition metal dichalcogenides an ideal platform to study phase transitions and critical phenomena. Here, the authors observe asymmetric critical exponents aro
Externí odkaz:
https://doaj.org/article/014709d2c23a46749bc8ba1c5d908c62
Autor:
Gang Hee Han, Michael Neumann, Seunghyun Song, Hyun-Woong Park, Byoung Hee Moon, Young Hee Lee
Publikováno v:
Journal of the Korean Physical Society. 82:57-67
Publikováno v:
Nanotechnology. 34:315201
van der Waals (vdW) layered materials have shown great potential for future optoelectronic applications owing to their unique and variable properties. In particular, two-dimensional layered materials enable the creation of various circuital building
Autor:
Byoung Hee Moon
Publikováno v:
Emergent Materials. 4:989-998
The emergence of layered transition metal dichalcogenides has invigorated interests in the challenging problem of metal-insulator transition in two dimensions. The observed clearly distinctive conductivity dependences on temperature show diverse char
Publikováno v:
Physical Review Applied. 18
Autor:
Hyun You Kim, Hye Yun Jeong, Sang Hyup Lee, Young Hee Lee, Min-Kyu Joo, Byoung Hee Moon, Youngjo Jin
Publikováno v:
Communications Physics, Vol 3, Iss 1, Pp 1-8 (2020)
Two-dimensional (2D) heterostructures often provide extraordinary carrier transport as exemplified by superconductivity or excitonic superfluidity. Recently, a double-layer graphene (Gr) separated by few-layered boron nitride demonstrated the Coulomb
Autor:
Hamza Zad Gul, Jung Ho Kim, Seok Joon Yun, Sung-Gyu Lee, Young Hee Lee, Homin Choi, Byoung Hee Moon, Gang Hee Han
Publikováno v:
ACS Nano. 13:13169-13175
The contact properties of van der Waals layered semiconducting materials are not adequately understood, particularly for edge contact. Edge contact is extremely helpful in the case of graphene, for...
Publikováno v:
ACS Nano. 13:6631-6637
Conductivity of the insulating phase increases generally at an elevated drain-source voltage due to the field-enhanced hopping or heating effect. Meanwhile, a transport mechanism governed by percolation in a low compensated semiconductor gives rise t
Publikováno v:
Emergent Materials. 4:811-812
Publikováno v:
Physical Review B. 102
The possibility of the strong electron-electron interaction driven insulating phase from the metallic phase in two-dimensions has been suggested for clean systems without intentional disorder, but its rigorous demonstration is still lacking. Here, we