Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Byeonghyeon Jang"'
Autor:
Byeonghyeon Jang, Seung Gi Seo, Hyungjun Kim, Seungmin Yeo, Taejin Choi, Jeong Gyu Song, Soo-Hyun Kim
Publikováno v:
Surface and Coatings Technology. 344:12-20
Hydrogenated amorphous carbon (a-C:H) thin films were prepared by hydrogen plasma-enhanced atomic layer deposition (PE-ALD). The a-C:H thin films were grown at low temperatures in the range of 150–350 °C using CBr4 as the precursor and hydrogen pl
Autor:
Soo-Hyun Kim, Byeonghyeon Jang
Publikováno v:
Korean Journal of Materials Research. 26:486-492
Tungsten (W) thin film was deposited at 400 oC using pulsed chemical vapor deposition (pulsed CVD); film was then evaluated as a nucleation layer for W-plug deposition at the contact, with an ultrahigh aspect ratio of about 14~15 (top opening diamete
Autor:
Soo-Hyun Kim, Byeonghyeon Jang
Publikováno v:
Korean Journal of Materials Research. 26:430-437
Aluminum oxide (Al2O3) thin films were grown by atomic layer deposition (ALD) using a new Al metalorganic precursor, dimethyl aluminum sec-butoxide (C12H30Al2O2), and water vapor (H2O) as the reactant at deposition temperatures ranging from 150 to 30
Autor:
Byeonghyeon Jang, Tae Eun Hong, Han-Bo-Ram Lee, Jun Beom Kim, Hyun-Jung Lee, Won Seok Han, Do-Joong Lee, Soo-Hyun Kim
Publikováno v:
Materials Letters. 168:218-222
This work reports a capability for a controlled preparation of tungsten nitride and carbide thin films via an atomic layer deposition (ALD) approach. Those films were deposited by ALD using a fluorine- and nitrogen-free W metallorganic precursor of t
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 35:031506
This study evaluated a simple and novel route to fabricate single-phase SnS thin films, consisting of the growth of smooth amorphous SnS2 films by atomic layer deposition at very low temperature using tetrakis(dimethylamino)tin {TDMASn, [(CH3)2N]4Sn}
Publikováno v:
Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; May2017, Vol. 35 Issue 3, p1-9, 9p