Zobrazeno 1 - 10
of 58
pro vyhledávání: '"Byeong-Ok Lim"'
Autor:
Byeong-Ok Lim, Song-Hyun Yun, Si-Ok Kim, Hyun-Kyu Kim, Yong-Kyu Jeon, Young-Geun Yoo, Su Hyun Lee, Bok-Hyung Lee
Publikováno v:
The Journal of Korean Institute of Electromagnetic Engineering and Science. 28:400-409
Autor:
Hyoung-Joo Kim, Dong-Seok Kim, Byeong-Ok Lim, Bok-Hyung Lee, Chul-Ho Won, Ryun-Hwi Kim, Gil-Wong Choi, Jung-Hee Lee, In-Pyo Hong
Publikováno v:
Journal of Crystal Growth. 395:5-8
AlGaN/GaN heterostructure was grown on semi-insulating 6H–SiC substrate. The effect of the thickness of the initial AlN buffer layer on the crystalline quality and the stress of the grown GaN layer were investigated. The semi-insulating characteris
Autor:
Ryun-Hwi Kim, Hyoung-Joo Kim, Gil-Wong Choi, Ki-Sik Im, Jung-Hee Lee, Byeong-Ok Lim, Jongmin Lee, Bok-Hyung Lee, Jung Soo Lee, Sang-Il Kim
Publikováno v:
The Journal of Korean Institute of Electromagnetic Engineering and Science. 24:128-135
This letter presents the MISHFET with si-doped AlGaN/GaN heterostructure for power amplifier. The device grown on 6H-SiC(0001) substrate with a gate length of 180 nm has been fabricated. The fabricated device exhibited maximum drain current density o
Autor:
Yong-Sung Eom, Kwang-Seong Choi, Jong-Jin Lee, Hyun-Cheol Bae, Ki-Jun Sung, Jong-Tae Moon, Byeong-Ok Lim, Sun-Woo Chu
Publikováno v:
ETRI Journal. 33:637-640
A novel bumping material, which is composed of a resin and Sn3Ag0.5Cu (SAC305) solder power, has been developed for the maskless solder-on-pad technology of the fine-pitch flip- chip bonding. The functions of the resin are carrying solder powder and
Publikováno v:
Journal of the Korean Physical Society. 53:3267-3272
Autor:
Sam-Dong Kim, Jung-Dong Park, Jung-Hun Oh, Jin-Koo Rhee, Bok-Hyung Lee, Yong-Hyun Baek, Dan-An, Byeong-Ok Lim
Publikováno v:
Current Applied Physics. 6:821-826
We fabricate single-ended resistive W-band millimeter-wave monolithic IC (MIMIC) mixers based on 0.1 μm InGaAs/InAlAs/GaAs metamorphic HEMT technology. The mixers show good characteristics in linearity and LO-RF isolation, and the mixers with IF amp
Autor:
Bok-Hyung Lee, Jung-Hun Oh, Mun-Kyo Lee, S.-D. Kim, Byeong-Ok Lim, Dan An, Jung-Dong Park, Sang-Yong Yi, Jin-Koo Rhee
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 54:2422-2430
We report a low conversion loss and high local oscillator (LO)-to-RF isolation 94-GHz monolithic-microwave integrated-circuit (MMIC) active down converter using 0.1-mum InGaAs/InAlAs/GaAs metamorphic high electron-mobility transistor (MHEMT). The fab
Autor:
Dong-Hoon Shin, Jung Hun Oh, Sung Woon Moon, Bok Hyung Lee, Byeong Ok Lim, Sam Dong Kim, Seok Gyu Choi, Jin Koo Rhee
Publikováno v:
IEICE Transactions on Electronics. :616-621
To perform a comparative study, we experimented on two differential epitaxial structures, the conventional metamorphic high-electron-mobility-transistor (MHEMT) using the InAlAs/InGaAs/InAlAs structure and the InP-composite-channel MHEMT adopting the
Publikováno v:
Microwave and Optical Technology Letters. 47:440-443
In this paper, we design and fabricate a 180° hybrid ring coupler in order to prove the fabrication possibilities of various passive components, by applying millimeter waves using newly proposed transmission lines, that is, dialectric-supported air-
Autor:
Young-Hoon Chun, Soon-Koo Kim, Byeong-Ok Lim, Tae-Jong Baek, Baek-Seok Ko, Dong-Hoon Shin, Sung-Chan Kim, Hyun-Chang Park, Han-Shin Lee, Jin-Koo Rhee
Publikováno v:
Journal of Micromechanics and Microengineering. 14:746-749
This paper describes a new GaAs-based surface-micromachined microstrip line supported by dielectric posts and with an air gap between the signal line and the ground metal. This new type of dielectric post and air-gapped microstripline (DAML) structur