Zobrazeno 1 - 10
of 42
pro vyhledávání: '"Byeong-Ok Cho"'
Autor:
Won Oh Lee, Ki Hyun Kim, Doo San Kim, You Jin Ji, Ji Eun Kang, Hyun Woo Tak, Jin Woo Park, Han Dock Song, Ki Seok Kim, Byeong Ok Cho, Young Lae Kim, Geun Young Yeom
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-9 (2022)
Abstract Precise and selective removal of silicon nitride (SiNx) over silicon oxide (SiOy) in a oxide/nitride stack is crucial for a current three dimensional NOT-AND type flash memory fabrication process. In this study, fast and selective isotropic
Externí odkaz:
https://doaj.org/article/d89a414ff0824370aad9a742a2808c8d
Autor:
Won Oh, Lee, Ki Hyun, Kim, Doo San, Kim, You Jin, Ji, Ji Eun, Kang, Hyun Woo, Tak, Jin Woo, Park, Han Dock, Song, Ki Seok, Kim, Byeong Ok, Cho, Young Lae, Kim, Geun Young, Yeom
Publikováno v:
Scientific reports. 12(1)
Precise and selective removal of silicon nitride (SiN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::d2e5b42b7dff415b1adb5f4bf7d91a50
https://pubmed.ncbi.nlm.nih.gov/35383214
https://pubmed.ncbi.nlm.nih.gov/35383214
Autor:
Hyun Woo Tak, Hye Joo Lee, Long Wen, Byung Jin Kang, Dain Sung, Jeong Woon Bae, Dong Woo Kim, Wonseok Lee, Seung Bae Lee, Keunsuk Kim, Byeong Ok Cho, Young Lea Kim, Han Dock Song, Geun Young Yeom
Publikováno v:
Applied Surface Science. 600:154050
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61881d1dceeee0023caa246e84719760
https://doi.org/10.1016/j.apsusc.2022.154050
https://doi.org/10.1016/j.apsusc.2022.154050
Publikováno v:
Journal of Applied Physics. 93:9345-9351
The origin of impurity incorporation in the ZrO2 films deposition by plasma-enhanced chemical vapor deposition with Ar-carried zirconium t-butoxide (ZTB) and O2 was delineated by optical emission spectroscopy, quadrupole mass spectrometry, transmissi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c35a6673b609528f6cd16a3dc0b54d96
https://doi.org/10.1063/1.1572193
https://doi.org/10.1063/1.1572193
Publikováno v:
Korean Journal of Chemical Engineering. 20:407-413
Simulation was used to investigate potential distributions around a grid of a Faraday cage and trajectories of ions inside the cage located in a high density CF4 plasma etcher. It was observed that the potential distributions near the edge of the gri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7497d0719de701452f1596f8cbadc66
https://doi.org/10.1007/bf02697259
https://doi.org/10.1007/bf02697259
Publikováno v:
Journal of Applied Physics. 93:745-749
Material characteristics of zirconium oxide thin films obtained by plasma enhanced chemical vapor deposition on p-type Si (100) substrates were investigated to explain their tunable electrical properties. The films obtained without heating had polycr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d6f278ee2215e9865703ba28e237439
https://doi.org/10.1063/1.1525044
https://doi.org/10.1063/1.1525044
Publikováno v:
Journal of Applied Physics. 92:4238-4244
We investigated the gas phase reaction mechanisms in the ZrO2-deposition plasma using zirconium tert-butoxide (ZTB) as a metalorganic precursor, Ar as a carrier of the ZTB vapor, and O2 as an oxidant using quadrupole mass spectrometry (QMS). Zirconiu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86ea03acd1d0be257901f21f10ec6e9d
https://doi.org/10.1063/1.1506421
https://doi.org/10.1063/1.1506421
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 20:1525-1531
Chlorine plasma is found to chemically etch ZrO2 thin films in an electron cyclotron resonance reactor, and the etch rate scaled linearly with the square root of ion energy at high ion energies with a threshold energy between 12–20 eV. The etching
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::482853970473b91feca81a7a239ae089
https://doi.org/10.1116/1.1491267
https://doi.org/10.1116/1.1491267
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 19:730-735
The angular dependence of the redeposition rates during SiO2 etching in a CF4 plasma was studied using three types of Faraday cages located in a transformer coupled plasma etcher. The SiO2 substrates were fixed on sample holder slopes that have diffe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4a9ac5aae29735b9dfa9c462a5d1dff
https://doi.org/10.1116/1.1368202
https://doi.org/10.1116/1.1368202
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 18:2791-2798
SiO2 etch rates in a CF4 plasma were obtained at various surface angles using a Faraday cage with pinholes on the upper plane through which ions are incident on the substrate fixed at various angles inside the cage. The reactive ion etching experimen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b254ff133087b133f9562a0d11eedee8
https://doi.org/10.1116/1.1318193
https://doi.org/10.1116/1.1318193