Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Byeong Geun Son"'
Publikováno v:
RSC Adv.. 4:45742-45748
Indium zinc oxide (IZO) thin film transistors (TFTs) with poly(4-vinylphenol-co-methylmethacrylate) (PVP-co-PMMA) gate insulators were fabricated at a low temperature (250 °C). The bottom gate IZO TFTs with a PVP-co-PMMA gate electric film exhibited
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28c57a6c6a805e4901cd31034f7fb654
https://doi.org/10.1039/c4ra08548e
https://doi.org/10.1039/c4ra08548e
Autor:
Ju Yeon Won, Ji Hun Song, Ah Young Hwang, So Yeon Je, Hyo Jin Kim, Byeong Geun Son, Chang Kyu Lee, Jae Kyeong Jeong, Chul Kyu Lee, Rino Choi
Publikováno v:
physica status solidi (RRL) - Rapid Research Letters. 7:485-488
Spin-coated zirconium oxide films were used as a gate dielectric for low-voltage, high performance indium zinc oxide (IZO) thin-film transistors (TFTs). The ZrO2 films annealed at 400 °C showed a low gate leakage current density of 2 × 10–8 A/cm2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d1a7c8393833cf22211bf228435392d
https://doi.org/10.1002/pssr.201307128
https://doi.org/10.1002/pssr.201307128
Publikováno v:
IEEE Electron Device Letters. 35:455-457
The effects of oxygen (O2) and nitrous oxygen (N2O) high pressure annealing (HPA) on soluble indium-zinc oxide (IZO) thin-film transistors (TFTs) were compared. The N2O HPA treatment produced superior device performance compared with the O2 HPA treat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3de1ca09bfdf6ff10b7a38c920ecf850
https://doi.org/10.1109/led.2014.2302841
https://doi.org/10.1109/led.2014.2302841
Autor:
Byeong Geun Son, Chul-Kyu Lee, Un Ki Kim, Rino Choi, Jae Kyeong Jeong, Se Yeob Park, Cheol Seong Hwang, Chang Kyu Lee, Hyeong Joon Kim, Hyo Jin Kim, Ji Hun Song, Yu Jin Choi
Publikováno v:
IEEE Electron Device Letters. 34:894-896
This letter examines the effect of oxygen (O2) high-pressure annealing (HPA) on indium zinc oxide (IZO) thin-film transistors (TFTs) with a high-quality Al2O3 passivation layer. The IZO TFTs anneal under an O2 atmosphere at 9 atm exhibits a high fiel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea3bfcf67bd2c60aebd1e6864724f8d4
https://doi.org/10.1109/led.2013.2259574
https://doi.org/10.1109/led.2013.2259574
Autor:
Woo-Sup Shin, Rino Choi, Byeong Geun Son, Hyo Jin Kim, Jae Kyeong Jeong, Dae-Hwan Kim, Chul-Kyu Lee, Jong-Uk Bae, Se Yeob Park, Chang Kyu Lee, Hong Yoon Jung
Publikováno v:
IEEE Electron Device Letters. 34:253-255
This letter examined the insertion effect of thermal TiO2 films on the device performance and photo-bias instability of zinc tin oxide (ZTO) thin-film transistors (TFTs). A 5.0-nm-thick TiOx device inserted at the ZTO/silicon nitride (SiNx) interface
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7eb89dbdc7dd1f53d064f99f8cda1149
https://doi.org/10.1109/led.2012.2230242
https://doi.org/10.1109/led.2012.2230242
Autor:
Young-Chang Joo, Se Yeob Park, Hyo Jin Kim, Chul Kyu Lee, Jae Kyeong Jeong, Young-Joo Lee, Chang Kyu Lee, Hong Yoon Jung, Byeong Geun Son
Publikováno v:
physica status solidi (RRL) - Rapid Research Letters. 7:196-198
Zn–Sn–O (ZTO) thin film transistors (TFTs) were fabricated with a Cu source/drain electrode. Although a reasonably high mobility (μFE) of 13.2 cm2/Vs was obtained for the ZTO TFTs, the subthreshold gate swing (SS) and threshold voltage (Vth) of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea9ca23477a0df0221d118d34faf6c0c
https://doi.org/10.1002/pssr.201206486
https://doi.org/10.1002/pssr.201206486
Autor:
Byeong Geun Son, So Yeon Je, Man Young Park, Rino Choi, Hyun Gwan Kim, Lee Mi Do, Jae Kyeong Jeong
Publikováno v:
ACS applied materialsinterfaces. 6(21)
Although solution-processable high-k inorganic dielectrics have been implemented as a gate insulator for high-performance, low-cost transition metal oxide field-effect transistors (FETs), the high-temperature annealing (300 °C) required to achieve a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ef8201e925528b6a0e4600b3663dd6fc
https://pubmed.ncbi.nlm.nih.gov/25285585
https://pubmed.ncbi.nlm.nih.gov/25285585
Autor:
Kyoung Seok Son, Hong Yoon Jung, Chul-Kyu Lee, Byeong Geun Son, Jong Han Jeong, Jae Kyeong Jeong, Chang Kyu Lee, Hyo Jin Kim, Se Yeob Park, Myung Kwan Ryu, Yeon-Gon Mo, Sang Yoon Lee
Publikováno v:
Journal of Physics D: Applied Physics. 46:055104
This study examined the effects of hydrogen incorporation in amorphous indium gallium zinc oxide (IGZO) on the performance and photo-bias stability of the resulting thin-film transistors (TFTs). It was found that the threshold voltage of IGZO TFTs wa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14aae86cfc3ecba16c2e38956b14cd7a
https://doi.org/10.1088/0022-3727/46/5/055104
https://doi.org/10.1088/0022-3727/46/5/055104
Autor:
Hyo Jin Kim, Se Yeob Park, Hong Yoon Jung, Byeong Geun Son, Chang-Kyu Lee, Chul-Kyu Lee, Jong Han Jeong, Yeon-Gon Mo, Kyoung Seok Son, Myung Kwan Ryu, Sangyoon Lee, Jae Kyeong Jeong
Publikováno v:
Journal of Physics D: Applied Physics; 2013, Vol. 46 Issue 5, p1-6, 6p
Publikováno v:
RSC Advances; 2014, Vol. 4 Issue 86, p45742-45748, 7p