Výsledky vyhledávání - "Buzynin, A. N."

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Application of elastic mid-IR-laser-light scattering for non-destructive inspection in microelectronics

Autor: Kalinushkin, V. P., Yuryev, V. A., Astafiev, O. V., Buzynin, A. N., Bletskan, N. I.

Publikováno v: MRS Symp. Proc., 378 (1995) 615-620

Some possible applications of the low-angle mid-IR-light scattering technique and some recently developed on its basis methods for non-destructive inspection and investigation of semiconductor materials and structures are discussed in the paper. The

Externí odkaz: http://arxiv.org/abs/1106.1327

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Large-scale defect accumulations in Czochralski-grown silicon

Autor: Kalinushkin, V. P., Buzynin, A. N., Yuryev, V. A., Astafiev, O. V.

Publikováno v: Silicon'96, Proc. 5-th Scientific and Business Conf., Roznov pod Radhostem, Czech Republic, 5-8 November 1996, ed. K. Vojtechovsky, Tecon Scientific, Roznov pod Radhostem, Czech Republic, 1996, vol. 1, p. 304, vol. 2, p. 96-104

Czochralski-grown silicon crystals were studied by the techniques of the low-angle mid-IR-light scattering and electron-beam-induced current. The large-scale accumulations of electrically-active impurities detected in this material were found to be d

Externí odkaz: http://arxiv.org/abs/1106.1202

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Application of elastic mid-IR light scattering for inspection of internal gettering operations

Autor: Astafiev, O. V., Buzynin, A. N., Kalinushkin, V. P., Yuryev, V. A.

Publikováno v: Silicon'96, Proc. 5-th Scientific and Business Conf. 5-8 November 1996, vol. 1, p. 305, vol. 2, p. 88-95

Recently, the internal gettering process has become one of the main operations for manufacturing of semiconductor devices of CZ Si. However, methods for the direct inspection of the internal gettering efficiency and stability have been practically ab

Externí odkaz: http://arxiv.org/abs/1106.1128

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On the nature of large-scale defect accumulations in Czochralski-grown silicon

Autor: Kalinushkin, V. P., Buzynin, A. N., Yuryev, V. A., Astafiev, O. V., Murin, D. I.

Publikováno v: Inst. Phys. Conf. Ser. No. 149 (1996) 219-224

Czochralski-grown boron-doped silicon crystals were studied by the techniques of the low-angle mid-IR-light scattering and electron-beam-induced current. The large-scale accumulations of electrically-active impurities detected in this material were f

Externí odkaz: http://arxiv.org/abs/1008.4694

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Possibilities of application of elastic mid-IR light scattering for inspection of internal gettering operations

Autor: Astafiev, O. V., Buzynin, A. N., Kalinushkin, V. P., Murin, D. I., Yuryev, V. A.

Publikováno v: Inst. Phys. Conf. Ser. No. 149 (1996) 343-348

A method of low-angle mid-IR light scattering is shown to be applicable for the contactless and non-destructive inspection of the internal gettering process in CZ Si crystals. A classifcation of scattering inhomogeneities in initial crystals and crys

Externí odkaz: http://arxiv.org/abs/1008.4534

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