Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Buttari, Dario"'
Autor:
Meneghesso, Gaudenzio *, Massari, Giovanni, Buttari, Dario, Bortoletto, Andrea, Maretto, Massimo, Zanoni, Enrico
Publikováno v:
In Microelectronics Reliability 1999 39(12):1759-1763
Autor:
Verzellesi, G., Pierobon, Roberto, Rampazzo, Fabiana, Meneghesso, Gaudenzio, Chini, Alessandro, Buttari, Dario, Mishra, U. K., Canali, C., Zanoni, Enrico
Publikováno v:
Scopus-Elsevier
Rf current collapse is investigated in AlGaN/GaN HEMT's by means of pulsed, transient, and small-signal measurements. Numerical device simulations are presented, showing that the concomitant presence, at the ungated device surface, of polarization-in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::56b326e939ef8e9f85a699ef622d2eed
https://doi.org/10.1109/iedm.2002.1175932
https://doi.org/10.1109/iedm.2002.1175932
Autor:
Buttari, Dario, Chini, Alessandro, Meneghesso, Gaudenzio, Zanoni, Enrico, Moran, B., Heikman, S., Zhang, N. Q., Shen, L., Coffie, R., Mishra, U. K.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3657::838080d96c87ac3552ad546d3a050181
http://hdl.handle.net/11577/2467367
http://hdl.handle.net/11577/2467367
Autor:
Palacios, Tomás, Chini, Alessandro, Buttari, Dario, Heikman, Sten, Chakraborty, Arpan, Keller, Stacia, DenBaars, Steven P., Mishra, Umesh K.
Publikováno v:
IEEE Transactions on Electron Devices; Mar2006, Vol. 53 Issue 3, p562-565, 4p
Autor:
Karmarkar, Aditya P., White, Brad D., Buttari, Dario, Fleetwood, Daniel M., Schrimpf, Ronald D., Weller, Robert A., Brilison, Leonard J., Mishra, Umesh K.
Publikováno v:
IEEE Transactions on Nuclear Science; Dec2005 Part 1, Vol. 52 Issue 6, p2239-2244, 6p