Zobrazeno 1 - 10
of 360
pro vyhledávání: '"Butera R"'
Publikováno v:
AVS Quantum Sci. 4, 016801 (2022)
Stochastic incorporation kinetics can be a limiting factor in the scalability of semiconductor fabrication technologies using atomic-precision techniques. While these technologies have recently been extended from donors to acceptors, the extent to wh
Externí odkaz:
http://arxiv.org/abs/2108.10805
Atomically precise dopant arrays in Si are being pursued for solid-state quantum computing applications. We propose a guided self-assembly process to produce atomically precise arrays of single dopant atoms in lieu of lithographic patterning. We leve
Externí odkaz:
http://arxiv.org/abs/2106.10556
B-doped $\delta$-layers were fabricated in Si(100) using BCl$_{3}$ as a dopant precursor in ultrahigh vacuum. BCl$_{3}$ adsorbed readily at room temperature, as revealed by scanning tunneling microscopy (STM) imaging. Annealing at elevated temperatur
Externí odkaz:
http://arxiv.org/abs/2103.07529
Autor:
Radue, Matthew S., Baek, Sungha, Farzaneh, Azadeh, Dwyer, K. J., Campbell, Quinn, Baczewski, Andrew D., Bussmann, Ezra, Wang, George T., Mo, Yifei, Misra, Shashank, Butera, R. E.
The adsorption of AlCl$_{3}$ on Si(100) and the effect of annealing the AlCl$_{3}$-dosed substrate was studied to reveal key surface processes for the development of atomic-precision acceptor-doping techniques. This investigation was performed via sc
Externí odkaz:
http://arxiv.org/abs/2101.09265
Autor:
Tyagi, S., Dreyer, M., Bowen, D., Hinkel, D., Taylor, P. J., Friedman, A. L., Butera, R. E., Krafft, C., Mayergoyz, I.
Spin-momentum locking in the surface mode of topological insulators (TI) leads to the surface accumulation of spin-polarized electrons caused by bias current flows through TI samples. Here, we demonstrate that scanning tunneling microscopy can be use
Externí odkaz:
http://arxiv.org/abs/2004.03563
Autor:
Tyagi, S., Dreyer, M., Bowen, D., Hinkel, D., Taylor, P. J., Friedman, A. L., Butera, R. E., Krafft, C., Mayergoyz, I.
The results of scanning tunneling microscopy experiments using iron-coated tungsten tips and current-carrying bismuth selenide ($Bi_2Se_3$) samples are reported. Asymmetry in tunneling currents with respect to the change in the direction of bias curr
Externí odkaz:
http://arxiv.org/abs/1911.00162
We investigated STM-induced chlorine desorption and lithographic patterning of Cl-terminated Si(100)-(2x1) surfaces at sample temperatures from 4 K to 600 K. STM lithography has previously focused on hydrogen-based chemistry for donor device fabricat
Externí odkaz:
http://arxiv.org/abs/1808.05690
We present topographic and spectroscopic scanning tunneling microscopy measurements taken on a 21 nm thick TiN film at a temperature of 4.2 K -- above the superconducting transition temperature (T_c = 3.8 K) of the sample. The film was polycrystallin
Externí odkaz:
http://arxiv.org/abs/1804.06823
Autor:
Xie, Ting, Dreyer, Michael, Bowen, David, Hinkel, Dan, Butera, R. E., Krafft, Charles, Mayergoyz, Isaak
The spin Hall effect in tungsten films has been experimentally studied by using STM-based measurements. These measurements have been performed by using tungsten and iron coated tungsten tips. In the case of tungsten tips, it has been observed that th
Externí odkaz:
http://arxiv.org/abs/1707.06116
Autor:
Xie, Ting, Dreyer, Michael, Bowen, David, Hinkel, Dan, Butera, R. E., Krafft, Charles, Mayergoyz, Isaak
A scanning tunneling microscopy based potentiometry technique for the measurements of the local surface electric potential is presented and illustrated by experiments performed on current-carrying thin tungsten films. The obtained results demonstrate
Externí odkaz:
http://arxiv.org/abs/1706.07882