Zobrazeno 1 - 10
of 443
pro vyhledávání: '"Bustarret, E."'
Autor:
Thi, T. N. Tran, Fernandez, B., Eon, D., Gheeraert, E., Hartwig, J., Lafford, T. A., Perrat-Mabilon, A., Peaucelle, C., Olivero, P., Bustarret, E.
Publikováno v:
Physica Status Solidi A 208 (9), 2057-2061 (2011)
A method for obtaining a smooth, single crystal diamond surface is presented, whereby a sacrificial defective layer is created by implantation and graphitized by annealing before being selectively etched. We have used O+ at 240 keV, the main process
Externí odkaz:
http://arxiv.org/abs/1608.07171
Autor:
Kardakova, A., Shishkin, A., Semenov, A., Ryabchun, S., Bousquet, J., Eon, D., Sacepe, B., Klein, Th., Bustarret, E., Goltsman, G. N., Klapwijk, T. M.
Publikováno v:
Physical Review B, 93, 064506, 2016
We report a study of the relaxation time of the restoration of the resistive superconducting state in single crystalline boron-doped diamond using amplitude-modulated absorption of (sub-)THz radiation (AMAR). The films grown on an insulating diamond
Externí odkaz:
http://arxiv.org/abs/1602.04046
Autor:
Plochocka, P., Portugall, O., Solane, P. Y., Gheeraert, E., Ranno, L., Bustarret, E., Bruyant, N., Breslavetz, I., Maude, D. K., Kanda, H., Rikken, G. L. J. A.
A magneto-optical study of the 1.4 eV Ni color center in boron-free synthetic diamond, grown at high pressure and high temperature, has been performed in magnetic fields up to 56 T. The data is interpreted using the effective spin Hamiltonian of Naza
Externí odkaz:
http://arxiv.org/abs/1203.0913
Autor:
Hoummada, K., Dahlem, F., Kociniewski, T., Boulmer, J., Dubois, C., Prudon, G., Bustarret, E., Courtois, H., Debarre, D., Mangelinck, D.
Publikováno v:
Appl. Phys. Lett. 101, 182602 (2012)
Superconducting boron-doped silicon films prepared by gas immersion laser doping (GILD) technique are analyzed by atom probe tomography. The resulting three-dimensional chemical composition reveals that boron atoms are incorporated into crystalline s
Externí odkaz:
http://arxiv.org/abs/1103.4409
Autor:
Dahlem, F., Kociniewski, T., Marcenat, C., Grockowiak, A., Pascal, L., Achatz, P., Boulmer, J., Debarre, D., Klein, T., Bustarret, E., Courtois, H.
Publikováno v:
Phys. Rev. B 82, 140505(R) (2010)
Scanning tunneling spectroscopies in the subKelvin temperature range were performed on superconducting Silicon epilayers doped with Boron in the atomic percent range. The resulting local differential conductance behaved as expected for a homogeneous
Externí odkaz:
http://arxiv.org/abs/1007.3598
Autor:
Marcenat, C., Kacmarcik, J., Piquerel, R., Achatz, P., Prudon, G., Dubois, C., Gautier, B., Dupuy, J. C., Bustarret, E., Ortega, L., Klein, T., Boulmer, J., Kociniewski, T., Debarre, D.
We report on a detailed analysis of the superconducting properties of boron-doped silicon films grown along the 001 direction by Gas Immersion Laser Doping. The doping concentration cB has been varied up to approx. 10 at.% by increasing the number of
Externí odkaz:
http://arxiv.org/abs/0910.5378
Autor:
Sacepe, B., Chapelier, C., Marcenat, C., Kacmarcik, J., Klein, T., Bernard, M., Bustarret, E.
Publikováno v:
Phys. Rev. Lett. 96, 097006 (2006)
We present the first scanning tunneling spectroscopy study of single-crystalline boron doped diamond. The measurements were performed below 100 mK with a low temperature scanning tunneling microscope. The tunneling density of states displays a clear
Externí odkaz:
http://arxiv.org/abs/cond-mat/0510541
Publikováno v:
In Applied Surface Science 15 December 2018 461:221-226
Publikováno v:
In Diamond & Related Materials June 2018 86:41-46
Autor:
Bustarret, E.
Publikováno v:
In Physica C: Superconductivity and its applications 15 July 2015 514:36-45