Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Busra Cankaya Akoglu"'
Autor:
Khizar Hayat, Salahuddin Zafar, Tariq Mehmood, Busra Cankaya Akoglu, Ekmel Ozbay, Ahsan Kashif
Publikováno v:
IET Circuits, Devices and Systems, Vol 15, Iss 8, Pp 830-841 (2021)
Abstract This work presents a gallium nitride (GaN) high electron mobility transistor (HEMT)–based cascaded multistage power amplifier (MPA) in class‐AB for L‐band radar applications. The purpose of this endeavour is to develop an MPA using GaN
Externí odkaz:
https://doaj.org/article/350dcf142b4f4337a16db41cc95114c4
Autor:
Salahuddin Zafar, Busra Cankaya Akoglu, Erdem Aras, Dogan Yilmaz, Muhammad Imran Nawaz, Ahsanullah Kashif, Ekmel Ozbay
Publikováno v:
International Journal of Circuit Theory and Applications
In this paper, we present a highly robust GaN-based X-band low-noise amplifier (LNA) showing promising small-signal and noise performance as well as good linearity. The LNA is fabricated using in-house 0.15 μm AlGaN/GaN on a SiC HEMT process. Owing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3f5a09a3cab2ece7a9284a3a7951b9f1
https://doi.org/10.1002/cta.3286
https://doi.org/10.1002/cta.3286
Autor:
Salahuddin Zafar, Yilmaz Durna, Hasan Kocer, Busra Cankaya Akoglu, Yunus Erdem Aras, Oguz Odabasi, Bayram Butun, Ekmel Ozbay
Publikováno v:
IEEE Transactions on Device and Materials Reliability
This paper presents a method to reveal the channel temperature profile of high electron mobility transistors (HEMTs) in a multi-stage monolithic microwave integrated circuit (MMIC). The device used for this study is a two-stage X-band low-noise ampli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3f18ed8e37aaad44433752da78d40e64
https://hdl.handle.net/11693/111380
https://hdl.handle.net/11693/111380
Autor:
Salahuddin Zafar, Erdem Aras, Busra Cankaya Akoglu, Gizem Tendurus, Muhammad Imran Nawaz, Ahsanullah Kashif, Ekmel Ozbay
Publikováno v:
International Journal of RF and Microwave Computer-Aided Engineering
GaAs and SiGe technologies take an edge over GaN-based devices in terms of better noise figure (NF). In this article, we present HEMT topologies and design techniques to achieve a sub-1.2 dB NF for a GaN-based X-band low-noise amplifier (LNA). This N
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::09ee31444448af2cc261a8ec981a022f
https://hdl.handle.net/11693/111613
https://hdl.handle.net/11693/111613
Autor:
Muhammad Imran Nawaz, Yunus Erdem Aras, Salahuddin Zafar, Busra Cankaya Akoglu, Gizem Tendurus, Ekmel Ozbay
Publikováno v:
Microwave Mediterranean Symposium (MMS)
Conference Name: 2022 Microwave Mediterranean Symposium (MMS) Date of Conference: 09-13 May 2022 Cascode HEMTs exhibit better stability and broad bandwidths performance as compared with common source HEMTs. This paper presents the design of a single
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::62aada973dfe962a43fa0c46c330fb7a
https://hdl.handle.net/11693/111225
https://hdl.handle.net/11693/111225
Publikováno v:
International Journal of Microwave and Wireless Technologies
In this paper, two high efficiency monolithic microwave integrated circuits (MMICs) are demonstrated using NANOTAM's in-house Ka-band fabrication technology. AlGaN/GaN HEMTs with 0.2 ${\rm \mu}$m gate lengths are characterized, and an output power de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::55ce49296c77fa5d182552d338319435
https://hdl.handle.net/11693/111923
https://hdl.handle.net/11693/111923
Autor:
Ahsan Kashif, Khizar Hayat, Busra Cankaya Akoglu, Salahuddin Zafar, Tariq Mehmood, Ekmel Ozbay
Publikováno v:
IET Circuits, Devices & Systems
IET Circuits, Devices and Systems, Vol 15, Iss 8, Pp 830-841 (2021)
IET Circuits, Devices and Systems, Vol 15, Iss 8, Pp 830-841 (2021)
This work presents a gallium nitride (GaN) high electron mobility transistor (HEMT)–based cascaded multistage power amplifier (MPA) in class‐AB for L‐band radar applications. The purpose of this endeavour is to develop an MPA using GaN HEMT dev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f54676ace9f3d89fa9e3d33322427ab7
https://doi.org/10.1049/cds2.12075
https://doi.org/10.1049/cds2.12075
Publikováno v:
2021 International Conference on Electrical, Computer and Energy Technologies (ICECET).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2681ec7c3b91a0ffa2e1a6c995cf3b28
https://doi.org/10.1109/icecet52533.2021.9698787
https://doi.org/10.1109/icecet52533.2021.9698787
Publikováno v:
Engineering Research Express
The effects of gate post-metal annealing (PMA) on the DC and RF characteristics of AlGaN/GaN high-electron-mobility transistors (HEMTs) were investigated. The unannealed and post gate-metal annealed AlGaN/GaN HEMTs were fully fabricated using NANOTAM
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::04808598b5f90a098651ebf7c4816135
https://doi.org/10.1088/2631-8695/aca95f
https://doi.org/10.1088/2631-8695/aca95f
Autor:
Erdem Aras, Busra Cankaya Akoglu, Bayram Butun, Kubra Elif Asan, Dogan Yilmaz, Ekmel Ozbay, Oguz Odabasi, Salahuddin Zafar
Publikováno v:
IEEE Transactions on Electron Devices
In this work, highly linear AlGaN/GaN laterally gated (or buried gate) high-electron-mobility transistors (HEMTs) are reported. The effect of gate dimensions on source-access resistance and the linearity of laterally gated devices are investigated ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f0759003a08555c292d65a1cc8f6e21a
https://aperta.ulakbim.gov.tr/record/236312
https://aperta.ulakbim.gov.tr/record/236312