Zobrazeno 1 - 10
of 34
pro vyhledávání: '"Bushlyakov, A."'
Autor:
Bushlyakov, A. I.1, Lyubutin, S. K.1, Ponomarev, A. V.1, Rukin, S. N.1, Slovikovskii, B. G.1, Timoshenkov, S. P.1, Tsyranov, S. N.1
Publikováno v:
Instruments & Experimental Techniques. Jul2006, Vol. 49 Issue 4, p516-522. 7p.
Autor:
S. K. Lyubutin, S. N. Tsyranov, S.P. Timoshenkov, B.G. Slovikovsky, S. N. Rukin, A.I. Bushlyakov, A. V. Ponomarev
Publikováno v:
IEEE Transactions on Plasma Science. 34:1873-1878
This paper describes a high-current nanosecond generator providing peak power of up to 4 GW, output voltage of 0.4-1 MV, pulse length of 8-10 ns, and pulse repetition rate of 300 Hz in the continuous mode and up to 1 kHz in the burst mode of operatio
Autor:
S. N. Tsyranov, B. G. Slovikovskii, A.I. Bushlyakov, A. V. Ponomarev, S. K. Lyubutin, S. N. Rukin, S.P. Timoshenkov
Publikováno v:
Instruments and Experimental Techniques. 49:516-522
A high-current nanosecond generator with a peak power of up to 4 GW, an output voltage of 0.4–1 MV, a pulse duration of 8–10 ns, and pulse repetition rates of 300 Hz in a continuous mode and up to 1 kHz in the burst mode is described. The average
Publikováno v:
Instruments and Experimental Techniques. 45:213-219
A high-current nanosecond-pulse generator with a pulse power of up to 1.6 GW, an output voltage of 0.5–1 MV, pulse duration of 40–60 ns, and repetition rates of 300 Hz (in a steady-state mode) and up to 850 Hz (in a burst mode) is described. Its
Publikováno v:
Russian Microelectronics. 29:417-422
Single-crystal silicon/noncrystalline ultrathin oxide multilayer structures were investigated. The oxide was formed by (100)Si thermal oxidation. An undoped polysilicon layer with an aluminum contact was used as a gate. The distribution of ionized el
Autor:
B.G. Slovikovsky, S. K. Lyubutin, S. N. Tsyranov, S.P. Timoshenkov, A. V. Ponomarev, S. N. Rukin, A.I. Bushlyakov
Publikováno v:
2007 IEEE 34th International Conference on Plasma Science (ICOPS).
Summary form only given. The paper describes high-current nanosecond generators providing a peak power of GW-range. The first generator of S-5NS type has output peak power of up to 4 GW, output voltage of 0.4-1 MV, pulse length of 8-10 ns, and pulse
Autor:
S.N. Tsiranov, B.G. Slovikovsky, S. N. Rukin, S. K. Lyubutin, S.P. Timoshenkov, A.I. Bushlyakov, Gennadii A Mesyats, A. V. Ponomarev, S. A. Darznek
Publikováno v:
Digest of Technical Papers. 12th IEEE International Pulsed Power Conference. (Cat. No.99CH36358).
This paper summarizes recent results of the study and development of high-power nanosecond generators employing a semiconductor opening switch. Physical processes, which underlie the operating principle of high-power opening switches based on nanosec
Autor:
S. N. Tsyranov, B.G. Slovikovsky, S.P. Timoshenkov, S. K. Lyubutin, E. A. Alichkin, S. N. Rukin, A.I. Bushlyakov, A.V. Ponomarev
Publikováno v:
Pulsed Power Seminar.
This report deals with experiments on generation of ultra-high-power short pulses in solid-state switches and describes characteristics of new generators. The first type of device is based on subnanosecond semiconductor opening switches (SOS) acting
Autor:
Gennadii A Mesyats, B.G. Slovikovsky, S.P. Timoshenkov, S. N. Rukin, A.I. Bushlyakov, A. V. Ponomarev
Publikováno v:
PPPS-2001 Pulsed Power Plasma Science 2001. 28th IEEE International Conference on Plasma Science and 13th IEEE International Pulsed Power Conference. Digest of Papers (Cat. No.01CH37251).
Summary form only given. For commercial applications of pulsed power an all-solid-state nanosecond generator has been developed. The generator is based on SOS-technology and designed to deliver 40 to 60-ns pulses with an amplitude of up to 1 MV at a
Autor:
Bushlyakov, Alexei I.1, Lyubutin, Sergei K.1, Ponomarev, Andrey V.1, Rukin, Sergei N.1 rukin@iep.uran.ru, Slovikovsky, Boris G.1, Timoshenkov, Sergei P.1, Tsyranov, Sergei N.1
Publikováno v:
IEEE Transactions on Plasma Science. Oct2006 Part 1 Of 4, Vol. 34 Issue 5, p1873-1878. 6p.