Zobrazeno 1 - 10
of 123
pro vyhledávání: '"Burt, Daniel"'
Autor:
Atalla, Mahmoud R. M., Kim, Youngmin, Assali, Simone, Burt, Daniel, Nam, Donguk, Moutanabbir, Oussama
CMOS-compatible short- and mid-wave infrared emitters are highly coveted for the monolithic integration of silicon-based photonic and electronic integrated circuits to serve a myriad of applications in sensing and communications. In this regard, a gr
Externí odkaz:
http://arxiv.org/abs/2302.06011
In First-Person shooter video games, spread is a mechanic that adds a random artificial inaccuracy to the player’s shots. Movement-amplified spread is a particular implementation of spread which amplifies the inaccuracy based on the speed the playe
Externí odkaz:
http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-477113
The second-order $\chi^{2}$ process underpins many important nonlinear optical applications in the field of classical and quantum optics. Generally, the $\chi^{2}$ process manifests itself only in a non-centrosymmetric dielectric medium via an anharm
Externí odkaz:
http://arxiv.org/abs/2204.04870
Autor:
Joo, Hyo-Jun, Kim, Youngmin, Burt, Daniel, Jung, Yongduck, Zhang, Lin, Chen, Melvina, Parluhutan, Samuel Jior, Kang, Dong-Ho, Lee, Chulwon, Assali, Simone, Ikonic, Zoran, Moutanabbir, Oussama, Cho, Yong-Hoon, Tan, Chuan Seng, Nam, Donguk
GeSn alloys have been regarded as a potential lasing material for a complementary metal-oxide-semiconductor (CMOS)-compatible light source. Despite their remarkable progress, all GeSn lasers reported to date have large device footprints and active ar
Externí odkaz:
http://arxiv.org/abs/2108.06142
GeSn alloys offer a promising route towards a CMOS compatible light source and the realization of electronic-photonic integrated circuits. One tactic to improve the lasing performance of GeSn lasers is to use a high Sn content, which improves the dir
Externí odkaz:
http://arxiv.org/abs/2108.01334
Autor:
Kim, Youngmin, Assali, Simone, Burt, Daniel, Jung, Yongduck, Joo, Hyo-Jun, Chen, Melvina, Ikonic, Zoran, Moutanabbir, Oussama, Nam, Donguk
GeSn alloys are promising candidates for complementary metal-oxide-semiconductor (CMOS)-compatible, tunable lasers. Relaxation of residual compressive strain in epitaxial GeSn has recently shown promise in improving the lasing performance. However, t
Externí odkaz:
http://arxiv.org/abs/2106.08874