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Publikováno v:
Journal of Applied Physics. 76:1363-1398
In the past several years, research in each of the wide‐band‐gap semiconductors, SiC, GaN, and ZnSe, has led to major advances which now make them viable for device applications. The merits of each contender for high‐temperature electronics and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb1690849764476832a150af7db8e81f
https://doi.org/10.1063/1.358463
https://doi.org/10.1063/1.358463
