Growth of silicon based germanium tin alloys

Autor: Kasper, E., Werner, J., Oehme, M., Escoubas, S., Burle, N., Schulze, J.

Publikováno v: In Thin Solid Films 1 February 2012 520(8):3195-3200

Tungsten diffusion in silicon.

Autor: De Luca, A., Portavoce, A., Texier, M., Grosjean, C., Burle, N., Oison, V., Pichaud, B.

Publikováno v: Journal of Applied Physics; 2014, Vol. 115 Issue 1, p1-13, 13p, 7 Black and White Photographs, 13 Graphs

In-situ combined X-Ray diffraction and optical curvature measurements to study microstructure and stress induced during the crystallization of GeTe thin films

Autor: Gallard, M., Amara, M.S., Lauraux, F., Guichet, C., Richard, M.-I., Escoubas, S., Mocuta, C., Noé, P., Sabbione, C., Hippert, F., Putero, Magali, Burle, N., Thomas, O.

Publikováno v: MAM2017 – Materials for Advanced Metallization Conference
MAM2017 – Materials for Advanced Metallization Conference, Mar 2017, Dresden, Germany

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::13cd61f272ee69099470df9a7b4490e5
https://hal-amu.archives-ouvertes.fr/hal-01781799

Metastability in the Matthews–Blakeslee mechanism for semiconductor film relaxation.

Autor: Putero-Vuaroqueaux, M., Burle, N., Pichaud, B.

Publikováno v: Philosophical Magazine Letters. Aug2001, Vol. 81 Issue 8, p519-525. 7p. 3 Black and White Photographs.

Structure et propagation de défauts dans les nanopiliers de silicium

Autor: Merabet, A., Texier, M., Tromas, C., Verdier, M., Talneau, A., Burle, N., Thomas, O., julien godet

Publikováno v: Congrés de l’Association Française de Cristallographie
Congrés de l’Association Française de Cristallographie, Jul 2016, Marseille, France
HAL

National audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::8c3974f0ca0ba8b17dd8b4c38b35df33
https://hal-amu.archives-ouvertes.fr/hal-01453348