Experimental study of transconductance and mobility behaviors in ultra-thin SOI MOSFETs with standard and thin buried oxides

Autor: Rudenko, T., Kilchytska, V., Burignat, S., Raskin, J.-P., Andrieu, F., Faynot, O., Le Tiec, Y., Landry, K., Nazarov, A., Lysenko, V.S., Flandre, D.

Publikováno v: In Solid State Electronics February 2010 54(2):164-170

Structural properties of Ge-implanted SiO 2 layers and related MOS memory effects

Autor: Duguay, S., Slaoui, A., Grob, J.J., Kanoun, M., Burignat, S., Souifi, A.

Publikováno v: In Materials Science & Engineering B 2005 124:488-493

Towards a model linking tunnel oxide degradation to programming window closure in EEPROM cells

Autor: Baboux, N., Busseret, C., Plossu, C., Burignat, S., Balland, B., Boivin, P.

Publikováno v: In Journal of Non-Crystalline Solids 2003 322(1):240-245

Structural properties of Ge-implanted SiO2 layers and related MOS memory effects

Autor: Duguay, S., Slaoui, A., Grob, J.J., Kanoun, M., Burignat, S., Souifi, A.

Publikováno v: European Material Research Society (E-MRS) Spring Conference, Symposium on Materials Science and Device Issues for Future Si-based Technologies
European Material Research Society (E-MRS) Spring Conference, Symposium on Materials Science and Device Issues for Future Si-based Technologies, 2005, Strasbourg, France

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::85bf964766137e5faacab22badd2569f
https://hal.archives-ouvertes.fr/hal-00021653

Analog/RF performance of sub-100 nm SOI MOSFETs with non-classical gate-source/drain underlap channel design.

Autor: Kranti, A., Rashmi, Burignat, S., Raskin, J.-P., Armstrong, G.A.

Publikováno v: 2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF); 2010, p45-48, 4p