Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Buried field shield"'
Autor:
Binder, Andrew T. ⁎, a, Cooper, James A. b, Steinfeldt, Jeffrey a, Allerman, Andrew A. a, Floyd, Richard a, Yates, Luke a, Kaplar, Robert J. a
Publikováno v:
In e-Prime - Advances in Electrical Engineering, Electronics and Energy September 2023 5
Autor:
Andrew T. Binder, James A. Cooper, Jeffrey Steinfeldt, Andrew A. Allerman, Richard Floyd, Luke Yates, Robert J. Kaplar
Publikováno v:
e-Prime: Advances in Electrical Engineering, Electronics and Energy, Vol 5, Iss , Pp 100218- (2023)
This paper describes a process for forming a buried field shield in GaN by an etch-and-regrowth process, which is intended to protect the gate dielectric from high fields in the blocking state. GaN trench MOSFETs made at Sandia serve as the baseline
Externí odkaz:
https://doaj.org/article/b7c8e9011ad2440cbab5a3681ba9f291