Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Buried field shield"'
Autor:
Binder, Andrew T. ⁎, a, Cooper, James A. b, Steinfeldt, Jeffrey a, Allerman, Andrew A. a, Floyd, Richard a, Yates, Luke a, Kaplar, Robert J. a
Publikováno v:
In e-Prime - Advances in Electrical Engineering, Electronics and Energy September 2023 5
Autor:
Andrew T. Binder, James A. Cooper, Jeffrey Steinfeldt, Andrew A. Allerman, Richard Floyd, Luke Yates, Robert J. Kaplar
Publikováno v:
e-Prime: Advances in Electrical Engineering, Electronics and Energy, Vol 5, Iss , Pp 100218- (2023)
This paper describes a process for forming a buried field shield in GaN by an etch-and-regrowth process, which is intended to protect the gate dielectric from high fields in the blocking state. GaN trench MOSFETs made at Sandia serve as the baseline
Externí odkaz:
https://doaj.org/article/b7c8e9011ad2440cbab5a3681ba9f291
Publikováno v:
Micromachines; Oct2023, Vol. 14 Issue 10, p1937, 21p
Autor:
Binder, Andrew T., Steinfeldt, Jeffrey, Allerman, Andrew A., Glaser, Caleb E., Yates, Luke, Floyd, Richard, Smith, Michael L., Rummel, Brian D., Reilly, Kevin J., Sharps, Paul, Kaplar, Robert J., Cooper, James A.
Publikováno v:
ECS Meeting Abstracts; 2023, Vol. MA2023-02 Issue 1, p1679-1679, 1p
Autor:
Marin Alexe, Ulrich Gösele
During the past decade direct wafer bonding has developed into a mature materials integration technology. This book presents state-of-the-art reviews of the most important applications of wafer bonding written by experts from industry and academia. T
