Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Burhanuddin Kamaluddin"'
Autor:
Ramin Yousefi, Burhanuddin Kamaluddin
Publikováno v:
Solid State Sciences. 12:252-256
In this study, the effects of thermal annealing temperature on the structural and optical properties of S-doped ZnO nanobelts were investigated. The XRD pattern shows that the crystallinity of S-doped ZnO nanobelts improves with increased annealing t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2d1a3e44e76935cd518c0079ceb3787
https://doi.org/10.1016/j.solidstatesciences.2009.11.002
https://doi.org/10.1016/j.solidstatesciences.2009.11.002
Autor:
Burhanuddin Kamaluddin, Ramin Yousefi
Publikováno v:
Applied Surface Science. 255:9376-9380
In this study, the optical properties of S- and Sn-doped ZnO nanobelts, grown by thermal evaporation, were investigated. The sulfur and tin contents in the nanobelts were about 12% and 8% (atomic), respectively. The average widths of the S- and Sn-do
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff0d36ccfe4473c3e686d955c763ee88
https://doi.org/10.1016/j.apsusc.2009.07.039
https://doi.org/10.1016/j.apsusc.2009.07.039
Autor:
Burhanuddin Kamaluddin, Ramin Yousefi
Publikováno v:
Journal of Alloys and Compounds. 479:L11-L14
ZnO nanowires were grown on Si(1 0 0) and Si(1 1 1) substrates by a simple physical deposition method in a conventional tube furnace without the use of any catalyst. The substrates were placed at different temperature zones. ZnO nanowires with differ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3055c90a08321614ff25ab8574d85e87
https://doi.org/10.1016/j.jallcom.2008.12.147
https://doi.org/10.1016/j.jallcom.2008.12.147
Publikováno v:
Journal de Physique III. 3:1201-1209
Stoichiometric ratios of AR grade AgI, Ag 2 O, V 2 O 5 and CeO 2 were melted in a furnace and the melt was rapidly quenched to liquid nitrogen temperature to form a glass. The glassy nature of the sample has been confirmed by powder X-ray diffraction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::baae911a32cc30165cd79af5a909258d
https://doi.org/10.1051/jp3:1993194
https://doi.org/10.1051/jp3:1993194
Autor:
Maung Tin Moe Lwin, Yusoff Mohd Amin, Hasan Abu Kassim, Burhanuddin Kamaluddin, A. K. Yahya, Shah Alam
Publikováno v:
AIP Conference Proceedings.
Natural zircon (ZrSiO4) has very high concentration of Uranium and Thorium of up to 5000 ppm [1]. Radioactive decay process of alpha particles from these impurities affects some changes like several atomic displacements in the crystalline structure o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c68fb29908cd58032af474dab9a405df
https://doi.org/10.1063/1.3469653
https://doi.org/10.1063/1.3469653
Autor:
Faridah Mohamad Idris, Wan Ahmad Tajuddin Wan Abdullah, Zainol Abidin Ibrahim, Burhanuddin Kamaluddin, Abdul Aziz Bin Mohamed
Publikováno v:
AIP Conference Proceedings.
The readout control of the former ZEUS detector comprises of five analogue modules, i.e. table control, pipeline control, buffer control, format control and generator module. A new readout control in form of Programmable Gate Array (FPGA) module, was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f712f5e4851b14e03ecccb782d14a2d5
https://doi.org/10.1063/1.3295583
https://doi.org/10.1063/1.3295583
Autor:
Ramin Yousefi, Burhanuddin Kamaluddin, Mahmood Ghoranneviss, Fatemeh Hajakbari, Swee-Ping Chia, Kurunathan Ratnavelu, Muhamad Rasat Muhamad
Publikováno v:
AIP Conference Proceedings.
In this paper, we report ZnO nanowires grown on AlN thin film deposited on glass as substrate by physical vapour deposition. The temperature of substrates was kept between 600° C and 500° C during the growth. The typical average diameters of the ob
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9771d0dcf8e18c24d2ef1674cf36958
https://doi.org/10.1063/1.3192272
https://doi.org/10.1063/1.3192272
Publikováno v:
2004 IEEE International Conference on Semiconductor Electronics; 2004, p4-4, 1p