Zobrazeno 1 - 10
of 52
pro vyhledávání: '"Burhan Bayraktaroglu"'
Autor:
Morley O. Stone, Kevin Leedy, Rajesh R. Naik, Nancy Kelley-Loughnane, Jorge L. Chávez, Burhan Bayraktaroglu, Sang N. Kim, Joshua A. Hagen
Publikováno v:
Sensors, Vol 11, Iss 7, Pp 6645-6655 (2011)
Zinc oxide field effect transistors (ZnO-FET), covalently functionalized with single stranded DNA aptamers, provide a highly selective platform for label-free small molecule sensing. The nanostructured surface morphology of ZnO provides high sensitiv
Externí odkaz:
https://doaj.org/article/0ea29744619848609e754076da536bc9
Autor:
Kevin D. Leedy, Yuanyuan V. Li, J. Israel Ramirez, Gregg H. Jessen, Thomas N. Jackson, Burhan Bayraktaroglu, Hitesh A. Basantani
Publikováno v:
IEEE Transactions on Nuclear Science. 62:1399-1404
We report effects for up to 100 Mrad ( ${{\rm SiO}_2}$ ) gamma-ray exposure on polycrystalline ZnO thin film transistors (TFTs) deposited by two different techniques. The radiation related TFT changes, either with or without electrical bias during ir
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1b24cea10b19860b0e4abbdecca3417
https://doi.org/10.1109/tns.2015.2417831
https://doi.org/10.1109/tns.2015.2417831
Autor:
Maryline Bawedin, M. Cheralathan, Jong-Hyun Lee, Burhan Bayraktaroglu, Sorin Cristoloveanu, Sungjae Chang, Jung-Hee Lee, Benjamin Iniguez
Publikováno v:
Solid-State Electronics
Solid-State Electronics, Elsevier, 2013, 90, pp.134-142. ⟨10.1016/j.sse.2013.02.040⟩
Repositori Institucional de la Universitat Rovira i Virgili
Consejo Superior de Investigaciones Científicas (CSIC)
Solid-State Electronics, Elsevier, 2013, 90, pp.134-142. ⟨10.1016/j.sse.2013.02.040⟩
Repositori Institucional de la Universitat Rovira i Virgili
Consejo Superior de Investigaciones Científicas (CSIC)
10.1016/j.sse.2013.02.040 Transport mechanisms in nanocrystalline ZnO Thin Film Transistors (TFT) were investigated in a wide temperature range. The channel is located at the ZnO-SiO2 interface and controlled with a bottom gate as in a back-channel S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::87d6ab470dbcd597335232ecbed3c188
https://doi.org/10.1016/j.sse.2013.02.040
https://doi.org/10.1016/j.sse.2013.02.040
Publikováno v:
IEEE Transactions on Electron Devices. 59:1488-1493
Positive and negative bias temperature instabilities (PBTI and NBTI) of ZnO/HfO2 thin-film transistors are investigated by the bias-temperature-stress test method. PBTI results show a linear shift in threshold voltage in the positive voltage directio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87f472c8a2e7da6a48d49a587a679fa5
https://doi.org/10.1109/ted.2012.2189048
https://doi.org/10.1109/ted.2012.2189048
Autor:
Nancy Kelley-Loughnane, Morley O. Stone, Joshua A. Hagen, Sang N. Kim, Kevin D. Leedy, Burhan Bayraktaroglu, Jorge L. Chávez, Rajesh R. Naik
Publikováno v:
Sensors (Basel, Switzerland)
Sensors, Vol 11, Iss 7, Pp 6645-6655 (2011)
Sensors, Vol 11, Iss 7, Pp 6645-6655 (2011)
Zinc oxide field effect transistors (ZnO-FET), covalently functionalized with single stranded DNA aptamers, provide a highly selective platform for label-free small molecule sensing. The nanostructured surface morphology of ZnO provides high sensitiv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2d514951c147ecb99bff3b61ea779b84
http://europepmc.org/articles/PMC3231651
http://europepmc.org/articles/PMC3231651
Publikováno v:
Journal of Crystal Growth. 324:110-114
Ga-doped ZnO films were deposited by pulsed laser deposition (PLD) at 200 °C and 10 mTorr in either pure argon (Ar films) or in oxygen (O 2 films). The bulk resistivity of the Ar films is −4 Ω cm at 300 K, two orders of magnitude lower than that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fbf0f6e1ee59e4580a18cd158035e5ca
https://doi.org/10.1016/j.jcrysgro.2011.03.002
https://doi.org/10.1016/j.jcrysgro.2011.03.002
Publikováno v:
International Journal of High Speed Electronics and Systems. 20:171-182
In this study, nc - ZnO films deposited in a Pulsed Laser Deposition (PLD) system at various temperatures were used to fabricate high performance transistors. As determined by Transmission Electron Microscope (TEM) images, nc - ZnO films deposited at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c7c93b23a8d27dc74a91e8a8ef2fc42e
https://doi.org/10.1142/s0129156411006507
https://doi.org/10.1142/s0129156411006507
Autor:
David J. Smith, Kevin D. Leedy, David C. Look, Yong-Hang Zhang, Ding Ding, Xianfeng Lu, Robin C. Scott, Burhan Bayraktaroglu
Publikováno v:
Journal of Electronic Materials. 40:419-428
Ga-doped ZnO films were prepared at 10 mTorr of oxygen over a broad temperature range using pulsed laser deposition. The carrier concentration of as-deposited films decreased monotonically with deposition temperature over a temperature range of 25°C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0522214136502c148c538b39277eab76
https://doi.org/10.1007/s11664-010-1396-9
https://doi.org/10.1007/s11664-010-1396-9
Autor:
Kevin D. Leedy, Burhan Bayraktaroglu
Publikováno v:
ECS Transactions. 16:61-73
The film growth conditions were optimized for pulsed laser deposited ZnO thin films for high performance field effect transistor applications. Transistors fabricated on Si and GaAs substrates with various gate lengths and gate widths and demonstrated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c6d6108585ff6fe21a1ea51fbdf50e1
https://doi.org/10.1149/1.2985844
https://doi.org/10.1149/1.2985844
Autor:
Patrick Getz, Burhan Bayraktaroglu, Spyridon Pavlidis, Joshua A. Hagen, Nancy Kelley-Loughnane, Oliver Brand
Publikováno v:
2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS).
Dual-gate IGZO TFTs fabricated using high-k dielectrics deposited via ALD at low temperature ( 2 offers a sensitivity of 76 mV/pH, which is beyond the Nernst limit found in traditional ISFET sensors.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83a512301312dd0f644394eafe454395
https://doi.org/10.1109/transducers.2015.7181178
https://doi.org/10.1109/transducers.2015.7181178