Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Burdov, Vladimir A."'
Autor:
Fomichev, Sergey, Burdov, Vladimir
It has been shown theoretically that strong quantum confinement regime in Si nanocrystals promotes the highly efficient simultaneous excitation of two electron-hole pairs (biexciton) by a single photon. The rate (inverse lifetime) of biexciton genera
Externí odkaz:
http://arxiv.org/abs/2312.03138
Publikováno v:
Appl. Sci. 2021, 11(2), 497
In this review we discuss several fundamental processes taking place in semiconductor nanocrystals (quantum dots, QDs) when their electron subsystem interacts with electromagnetic (EM) radiation. The physical phenomena of light emission and EM energy
Externí odkaz:
http://arxiv.org/abs/2101.03412
Autor:
Burdov, Vladimir A.
Some basic radiative and non-radiative processes taking place in semiconductor nanocrystals are discussed, and rates of these processes are calculated. In particular, in the present review we explore both intra-crystallite processes, such as the phot
Externí odkaz:
http://arxiv.org/abs/2001.05242
Autor:
Belyakov Vladimir, Burdov Vladimir
Publikováno v:
Nanoscale Research Letters, Vol 2, Iss 11, Pp 569-575 (2007)
AbstractElectron structure of a silicon quantum dot doped with a shallow hydrogen-like donor has been calculated for the electron states above the optical gap. Within the framework of the envelope-function approach we have calculated the fine splitti
Externí odkaz:
https://doaj.org/article/5a4772de31f6467b95aac4b6e47a6a0f
Publikováno v:
Journal of Applied Physics; 2018, Vol. 123 Issue 16, pN.PAG-N.PAG, 6p, 1 Diagram, 4 Graphs
Autor:
Burdov, Vladimir A. *, Solenov, Dmitry S.
Publikováno v:
In Physica E: Low-dimensional Systems and Nanostructures September 2004 24(3-4):217-221
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Publikováno v:
The Journal of Physical Chemistry - Part C; 20240101, Issue: Preprints
Autor:
Konakov, Anton, Ezhevskii, Alexander, Soukhorukov, Andrey, Guseinov, Davud, Popkov, Sergey, Burdov, Vladimir
Publikováno v:
Magnetic Resonance in Solids. Electronic Journal.
Temperature dependence of the conduction electron Lande g-factor in silicon has been investigated both theoretically and experimentally. Theoretical consideration is based on the renormalization of the electron energy in the magnetic field by the ele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2806::de15a85484e2e441382743abce8779a5
http://cyberleninka.ru/article_covers/14387640.png
http://cyberleninka.ru/article_covers/14387640.png
