Sn-doped Bi 1.1 Sb 0.9 Te 2 S bulk crystal topological insulator with excellent properties

Autor: Kushwaha, SK, Pletikosic, I, Liang, T, Gyenis, A, Lapidus, SH, Tian, Y, Zhao, H, Burch, KS, Lin, J, Wang, W, Ji, H, Fedorov, AV, Yazdani, A, Ong, NP, Valla, T, Cava, RJ

Publikováno v: Kushwaha, SK; Pletikosic, I; Liang, T; Gyenis, A; Lapidus, SH; Tian, Y; et al.(2016). Sn-doped Bi 1.1 Sb 0.9 Te 2 S bulk crystal topological insulator with excellent properties. Nature Communications, 7. doi: 10.1038/ncomms11456. Lawrence Berkeley National Laboratory: Retrieved from: http://www.escholarship.org/uc/item/1bm1c71c

A long-standing issue in topological insulator research has been to find a bulk single crystal material that provides a high-quality platform for characterizing topological surface states without interference from bulk electronic states. This materia

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od_______325::cdb2feb12b824ec3c03f92c699221e2e
http://www.escholarship.org/uc/item/1bm1c71c

Doping-dependent charge dynamics in CuₓBi₂Se₃

Autor: Sandilands, LJ, Reijnders, AA, Kriener, M, Segawa, K, Sasaki, S, Ando, Y, Burch, KS

Superconducting CuₓBi₂Se₃ has attracted significant attention as a candidate topological superconductor. Besides inducing superconductivity, the introduction of Cu atoms to this material has also been observed to produce a number of unusual fea

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::6a18d6395823a5ffc7050eda65e8e57d

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Accessing bands with extended quantum metric in kagome Cs 2 Ni 3 S 4 through soft chemical processing.

Autor: Villalpando G; Department of Chemistry, Princeton University, Princeton, NJ 08544, USA., Jovanovic M; Department of Chemistry, Princeton University, Princeton, NJ 08544, USA.; Department of Chemistry, North Carolina State University, Raleigh, NC 27606, USA., Hoff B; Department of Chemistry, Princeton University, Princeton, NJ 08544, USA., Jiang Y; Donostia International Physics Center (DIPC), Paseo Manuel de Lardizábal, 20018 San Sebastián, Spain., Singha R; Department of Chemistry, Princeton University, Princeton, NJ 08544, USA.; Department of Physics, Indian Institute of Technology Guwahati, Assam 781039, India., Yuan F; Department of Chemistry, Princeton University, Princeton, NJ 08544, USA., Hu H; Donostia International Physics Center (DIPC), Paseo Manuel de Lardizábal, 20018 San Sebastián, Spain., Călugăru D; Department of Physics, Princeton University, Princeton, NJ 08544, USA., Mathur N; Department of Chemistry, Princeton University, Princeton, NJ 08544, USA., Khoury JF; Department of Chemistry, Princeton University, Princeton, NJ 08544, USA.; School of Molecular Sciences, Arizona State University, Tempe, Arizona, 85287, United States., Dulovic S; Department of Chemistry, Princeton University, Princeton, NJ 08544, USA., Singh B; Department of Physics, Boston College, Chestnut Hill, MA 02467, USA., Plisson VM; Department of Physics, Boston College, Chestnut Hill, MA 02467, USA., Pollak CJ; Department of Chemistry, Princeton University, Princeton, NJ 08544, USA., Moya JM; Department of Chemistry, Princeton University, Princeton, NJ 08544, USA., Burch KS; Department of Physics, Boston College, Chestnut Hill, MA 02467, USA., Bernevig BA; Donostia International Physics Center (DIPC), Paseo Manuel de Lardizábal, 20018 San Sebastián, Spain.; Department of Physics, Princeton University, Princeton, NJ 08544, USA.; IKERBASQUE, Basque Foundation for Science, 48013 Bilbao, Spain., Schoop LM; Department of Chemistry, Princeton University, Princeton, NJ 08544, USA.

Publikováno v: Science advances [Sci Adv] 2024 Sep 20; Vol. 10 (38), pp. eadl1103. Date of Electronic Publication: 2024 Sep 20.