Zobrazeno 1 - 10
of 62
pro vyhledávání: '"Buqing Xu"'
Autor:
Buqing Xu, Gan Zhang, Örjan Gustafsson, Kimitaka Kawamura, Jun Li, August Andersson, Srinivas Bikkina, Bhagawati Kunwar, Ambarish Pokhrel, Guangcai Zhong, Shizhen Zhao, Jing Li, Chen Huang, Zhineng Cheng, Sanyuan Zhu, Pingan Peng, Guoying Sheng
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-12 (2022)
Isotope fingerprinting is used to track precursor sources and formation pathways of aqueous SOA, such as oxalic acid, finding that fossil fuel precursors contributions have largely been underestimated.
Externí odkaz:
https://doaj.org/article/0ba538826dc049899a83c9869477e32a
Publikováno v:
Fundamental Research, Vol 1, Iss 3, Pp 306-316 (2021)
Air pollution and climate change are two important threats facing in our planet and are tightly linked to carbonaceous components in the atmosphere. A better understanding of the emission sources and environmental fate/sink of carbonaceous components
Externí odkaz:
https://doaj.org/article/b76ea3ecbbf44557bff859cb97ebf938
Autor:
Yong Du, Wenqi Wei, Buqing Xu, Guilei Wang, Ben Li, Yuanhao Miao, Xuewei Zhao, Zhenzhen Kong, Hongxiao Lin, Jiahan Yu, Jiale Su, Yan Dong, Wenwu Wang, Tianchun Ye, Jianjun Zhang, Henry H. Radamson
Publikováno v:
Micromachines, Vol 13, Iss 10, p 1579 (2022)
The development of the low dislocation density of the Si-based GaAs buffer is considered the key technical route for realizing InAs/GaAs quantum dot lasers for photonic integrated circuits. To prepare the high-quality GaAs layer on the Si substrate,
Externí odkaz:
https://doaj.org/article/174102d112a741b28c7308bbd43ec1be
Autor:
Buqing Xu, Guilei Wang, Yong Du, Yuanhao Miao, Ben Li, Xuewei Zhao, Hongxiao Lin, Jiahan Yu, Jiale Su, Yan Dong, Tianchun Ye, Henry H. Radamson
Publikováno v:
Nanomaterials, Vol 12, Iss 15, p 2704 (2022)
The realization of high-performance Si-based III-V quantum-dot (QD) lasers has long attracted extensive interest in optoelectronic circuits. This manuscript presents InAs/GaAs QD lasers integrated on an advanced GaAs virtual substrate. The GaAs layer
Externí odkaz:
https://doaj.org/article/bff3db07284140e9b0b8ee73eea59212
Autor:
Mohammadreza Kolahdouz, Buqing Xu, Aryanaz Faghih Nasiri, Maryam Fathollahzadeh, Mahmoud Manian, Hossein Aghababa, Yuanyuan Wu, Henry H. Radamson
Publikováno v:
Micromachines, Vol 13, Iss 8, p 1257 (2022)
As the scaling technology in the silicon-based semiconductor industry is approaching physical limits, it is necessary to search for proper materials to be utilized as alternatives for nanoscale devices and technologies. On the other hand, carbon-rela
Externí odkaz:
https://doaj.org/article/c30f3cb3eaa04d81bf88a0c9093615c7
Autor:
Buqing Xu, Yong Du, Guilei Wang, Wenjuan Xiong, Zhenzhen Kong, Xuewei Zhao, Yuanhao Miao, Yijie Wang, Hongxiao Lin, Jiale Su, Ben Li, Yuanyuan Wu, Henry H. Radamson
Publikováno v:
Materials, Vol 15, Iss 10, p 3594 (2022)
In this manuscript, a novel dual-step selective epitaxy growth (SEG) of Ge was proposed to significantly decrease the defect density and to create fully strained relaxed Ge on a Si substrate. With the single-step SEG of Ge, the threading defect densi
Externí odkaz:
https://doaj.org/article/80d90ff530c541cd8ef55c4ea41b50b6
Autor:
Buqing Xu, Guilei Wang, Yong Du, Yuanhao Miao, Yuanyuan Wu, Zhenzhen Kong, Jiale Su, Ben Li, Jiahan Yu, Henry H. Radamson
Publikováno v:
Nanomaterials, Vol 12, Iss 9, p 1403 (2022)
In this manuscript, the integration of a strained Ge channel with Si-based FinFETs was investigated. The main focus was the preparation of high-aspect-ratio (AR) fin structures, appropriate etching topography and the growth of germanium (Ge) as a cha
Externí odkaz:
https://doaj.org/article/6e003f0339c148d09086774c0e86a84c
Autor:
Yong Du, Buqing Xu, Guilei Wang, Yuanhao Miao, Ben Li, Zhenzhen Kong, Yan Dong, Wenwu Wang, Henry H. Radamson
Publikováno v:
Nanomaterials, Vol 12, Iss 5, p 741 (2022)
Si-based group III-V material enables a multitude of applications and functionalities of the novel optoelectronic integration chips (OEICs) owing to their excellent optoelectronic properties and compatibility with the mature Si CMOS process technolog
Externí odkaz:
https://doaj.org/article/8aa0692bceef4251b58ded5ed27498de
Autor:
Yuanhao Miao, Guilei Wang, Zhenzhen Kong, Buqing Xu, Xuewei Zhao, Xue Luo, Hongxiao Lin, Yan Dong, Bin Lu, Linpeng Dong, Jiuren Zhou, Jinbiao Liu, Henry H. Radamson
Publikováno v:
Nanomaterials, Vol 11, Iss 10, p 2556 (2021)
GeSn alloys have already attracted extensive attention due to their excellent properties and wide-ranging electronic and optoelectronic applications. Both theoretical and experimental results have shown that direct bandgap GeSn alloys are preferable
Externí odkaz:
https://doaj.org/article/65843389625b45b4b9ca41a671e9efe2
Autor:
Yong Du, Guilei Wang, Yuanhao Miao, Buqing Xu, Ben Li, Zhenzhen Kong, Jiahan Yu, Xuewei Zhao, Hongxiao Lin, Jiale Su, Jianghao Han, Jinbiao Liu, Yan Dong, Wenwu Wang, Henry H. Radamson
Publikováno v:
Nanomaterials, Vol 11, Iss 6, p 1421 (2021)
This article presents a novel method to grow a high-quality compressive-strain Ge epilayer on Si using the selective epitaxial growth (SEG) applying the RPCVD technique. The procedures are composed of a global growth of Ge layer on Si followed by a p
Externí odkaz:
https://doaj.org/article/77c37057d19847b381b4f33cc24db007