INTRINSIC HIGH‐FREQUENCY OSCILLATIONS AND EQUIVALENT CIRCUIT MODEL IN THE NEGATIVE DIFFERENTIAL RESISTANCE REGION OF RESONANT TUNNELING DEVICES

Autor: Buot, F.A., Jensen, K.L.

Publikováno v: COMPEL -The international journal for computation and mathematics in electrical and electronic engineering, 1991, Vol. 10, Issue 4, pp. 241-253.

Externí odkaz: http://www.emeraldinsight.com/doi/10.1108/eb051702

Transient thermal simulations of a three-dimensional unit cell in power control systems and high-power microwave devices

Autor: Buot, F.A, Mittereder, J.A, Anderson, W.T, Ioannou, D.E

Publikováno v: In Solid State Electronics 2002 46(1):123-131

Operation and design of metal-oxide tunnel transistors.

Autor: Rendell, R.W., Buot, F.A.

Publikováno v: Journal of Applied Physics; 11/1/1998, Vol. 84 Issue 9, p5021, 11p

TWO‐DIMENSIONAL NUMERICAL MODELLING OF HEMT USING AN ENERGY TRANSPORT MODEL

Autor: BUOT, F.A.

Publikováno v: COMPEL -The international journal for computation and mathematics in electrical and electronic engineering, 1987, Vol. 6, Issue 1, pp. 45-52.

Externí odkaz: http://www.emeraldinsight.com/doi/10.1108/eb010300

Monte Carlo particle simulation of radiation-induced heating in GaAs field-effect transistors

Autor: Buot, F.A., Anderson, T., Moglestue, C.

Exposure of GaAs field-effect transistors to alpha-particle radiation has resulted in burnout paths from under the gate to both the source and the drain. Monte Carlo calculations show that the current response from an alpha-particle penetrating the c

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od_______610::97abdfa0e4f1e923d2122334cc77113f
https://publica.fraunhofer.de/handle/publica/180268