Zobrazeno 1 - 10
of 36
pro vyhledávání: '"Bunjiro Tsujiyama"'
Publikováno v:
Journal of The Electrochemical Society. 137:340-342
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b8e329c9c65839a6491a8debb08f831
https://doi.org/10.1149/1.2086415
https://doi.org/10.1149/1.2086415
A semi-empirical model for the field-effect mobility of hydrogenated polycrystalline-silicon MOSFETs
Publikováno v:
IEEE Transactions on Electron Devices. 35:669-674
The quantitative relationship between field-effect mobility ( mu /sub FE/) and grain-boundary trap-state density (N/sub t/) in hydrogenated polycrystalline-silicon (poly-Si) MOSFETs is investigated. The focus is on the field-effect mobility in MOSFET
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c03357080cbade42aabb7cb5b6a8807c
https://doi.org/10.1109/16.2511
https://doi.org/10.1109/16.2511
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 5:1771-1774
Magnetron‐sputtered Ta2O5 films on Si are analyzed for their applications to semiconductor devices. It is clarified that the transition region formed at the Ta2O5/Si interface plays a significant role in determining electrical characteristics. This
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::329e7f4e7811b20fa9a7c5e8a14a50d3
https://doi.org/10.1116/1.574536
https://doi.org/10.1116/1.574536
Publikováno v:
The Journal of the Institute of Television Engineers of Japan. 42:1097-1103
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::141c16270f9df418f4ffb00207cc58c6
https://doi.org/10.3169/itej1978.42.1097
https://doi.org/10.3169/itej1978.42.1097
Publikováno v:
Journal of The Electrochemical Society. 130:2448-2452
The effects of annealing and quenching EL phosphors on their maintenance are investigated. Annealing at a temperature from 700° to 1000°C for more than 1 hr in or air, and quenching are most efficient for EL life improvement. For example, EL phosph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::703926a4aede3bac78a667cb7b88f6d1
https://doi.org/10.1149/1.2119611
https://doi.org/10.1149/1.2119611
Autor:
Bunjiro Tsujiyama
Publikováno v:
Hyomen Kagaku. 9:276-281
Recently, the electroluminescent (EL) technology has made a great progress in developing multi-color panels. In this paper, first, both AC and DC ZnS electroluminescent display devices having powder or thin film structures are reviewed, and their pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::461af41133b8f95752f55248de437eba
https://doi.org/10.1380/jsssj.9.276
https://doi.org/10.1380/jsssj.9.276
Publikováno v:
Journal of The Electrochemical Society. 130:2259-2263
La deterioration de l'electroluminescence est en etroite relation avec la densite de lacunes de soufre et la qualite cristalline du materiau: etude par RPE et diffraction RX
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6926b3afbdd613ec502b7680fb13728
https://doi.org/10.1149/1.2119564
https://doi.org/10.1149/1.2119564
Publikováno v:
Journal of Mathematical Physics. 8:124-130
The one‐dimensional Ising model with general spin S has been formulated as an eigenvalue problem of order 2S + 1. Two methods to reduce the order to [S + 1] have been developed for calculating the energy and the susceptibility at zero external fiel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc123ca6744eeceea35397f5b4bb9672
https://doi.org/10.1063/1.1705089
https://doi.org/10.1063/1.1705089
Publikováno v:
IEEE Electron Device Letters. 8:368-370
The relationship between crystallization processes in the formation of polycrystalline-silicon (poly-Si) films and trap state densities at grain boundaries is described. Three different crystallization techniques were used to obtain poly-Si films: 1)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a215aeee97ad090e41177516e333b8f
https://doi.org/10.1109/edl.1987.26662
https://doi.org/10.1109/edl.1987.26662
Publikováno v:
IEEE Electron Device Letters. 8:434-436
Leakage current characteristics of offset-gate-structure polycrystalline-silicon (poly-Si) MOSFET's are studied as a function of dopant concentration N off in offset-gate regions. Leakage current markedly decreases from 1 × 10-9to 2 × 10-11A at V D
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e78253335c37df4c5e0b41d26002e636
https://doi.org/10.1109/edl.1987.26684
https://doi.org/10.1109/edl.1987.26684