Zobrazeno 1 - 10
of 160
pro vyhledávání: '"Bulutay, C."'
Publikováno v:
Phys. Rev. Lett. 108, 197403 (2012)
Resonant optical excitation of lowest-energy excitonic transitions in self-assembled quantum dots lead to nuclear spin polarization that is qualitatively different from the well known optical orientation phenomena. By carrying out a comprehensive set
Externí odkaz:
http://arxiv.org/abs/1110.5524
Publikováno v:
Phys. Rev. B 77, 155306 (2008)
The interface chemistry of silicon nanocrystals (NCs) embedded in amorphous oxide matrix is studied through molecular dynamics simulations with the chemical environment described by the reactive force field model. Our results indicate that the Si NC-
Externí odkaz:
http://arxiv.org/abs/0804.2322
Autor:
Bulutay, C.
Publikováno v:
Physica E 38, 112-117 (2007)
The structural control of silicon nanocrystals is an important technological problem. Typically a distribution of nanocrystal sizes and shapes emerges under the uncontrolled aggregation of smaller clusters. The aim of this computational study is to i
Externí odkaz:
http://arxiv.org/abs/0804.2016
Autor:
Sevik, C., Bulutay, C.
Publikováno v:
Phys. Rev. B 77, 125414 (2008)
For Si and Ge nanocrystals (NCs) embedded in wide band-gap matrices, Auger recombination (AR) and carrier multiplication (CM) lifetimes are computed exactly in a three-dimensional real space grid using empirical pseudopotential wave functions. Our re
Externí odkaz:
http://arxiv.org/abs/0709.1329
Autor:
Bulutay, C.
Publikováno v:
Phys. Rev. B 76, 205321 (2007) (14 pages)
Embedded Si and Ge nanocrystals (NCs) in wide band-gap matrices are studied theoretically using an atomistic pseudopotential approach. From small clusters to large NCs containing on the order of several thousand atoms are considered. Effective band-g
Externí odkaz:
http://arxiv.org/abs/0706.0773
Autor:
Sevik, C., Bulutay, C.
Publikováno v:
Journal of Materials Science 42, 6555-6565 (2007)
An extensive theoretical study is performed for wide bandgap crystalline oxides and nitrides, namely, SiO_{2}, GeO_{2}, Al_{2}O_{3}, Si_{3}N_{4}, and Ge_{3}N_{4}. Their important polymorphs are considered which are for SiO_{2}: $\alpha$-quartz, $\alp
Externí odkaz:
http://arxiv.org/abs/cond-mat/0610176
Autor:
Bulutay, C.
Publikováno v:
Turk. J. Phys. 30, 287-294 (2006)
The $k \cdot p$ is a versatile technique that describes the semiconductor band structure in the vicinity of the bandgap. The technique can be extended to full Brillouin zone by including more coupled bands into consideration. For completeness, a deta
Externí odkaz:
http://arxiv.org/abs/cond-mat/0610018
Autor:
Sevik, C., Bulutay, C.
Publikováno v:
Phys. Rev. B 74, 193201 (2006)
High-dielectric constant and wide band gap oxides have important technological applications. The crystalline oxide polymorphs having lattice constant compatibility to silicon are particularly desirable. One recently reported candidate is the inverse
Externí odkaz:
http://arxiv.org/abs/cond-mat/0607353
Accurate characterization of charged impurity centers is of importance for the electronic devices and materials. The role of valley-spin degeneracy on the screening of an attractive ion by the mobile carriers is assessed within a range of systems fro
Externí odkaz:
http://arxiv.org/abs/cond-mat/9708103
Autor:
Bulutay, C., Tomak, M.
We draw attention to the past literature on valley phase transition in Si(100) MOSFETs. The recent experiments performed by Kravchenko and co-workers indicating metal-insulator transition in Si MOSFETs are also in accord with the valley phase transit
Externí odkaz:
http://arxiv.org/abs/cond-mat/9707339