Zobrazeno 1 - 10
of 72
pro vyhledávání: '"Bulent M Basol"'
Autor:
Abhijeet Joshi, Bulent M. Basol
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 757-760 (2022)
Differential Hall Effect Metrology (DHEM) technique was used to characterize highly n-type doped Si epi layers deposited on p-type Si wafers. Total dopant concentration, doping depth profile and post deposition annealing condition were changed for va
Externí odkaz:
https://doaj.org/article/62f5f1e84fc0402783f9c3be55c42704
Autor:
Abhijeet Joshi, Bulent M. Basol
Publikováno v:
MRS Advances. 7:1326-1330
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84bbc89d6e0aadfac281116f3d52c0f6
https://doi.org/10.1557/s43580-022-00445-6
https://doi.org/10.1557/s43580-022-00445-6
Publikováno v:
ECS Transactions. 109:329-333
Ultra-violet (UV) laser annealing (LA) is a promising technology that is being investigated for next-generation CMOS processing. UV-LA’s unique capability of activating dopants very near to the surface due to the very shallow penetration depth can
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb11137a0f1450803ab5fc77a42f958a
https://doi.org/10.1149/10904.0329ecst
https://doi.org/10.1149/10904.0329ecst
Publikováno v:
Journal of Materials Science: Materials in Electronics. 33:16272-16285
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::558074efa66ffef30dfd5060bee45164
https://doi.org/10.1007/s10854-022-08520-2
https://doi.org/10.1007/s10854-022-08520-2
Autor:
Chia-He Chang, YewChung Sermon Wu, Bulent M. Basol, Hung-Yuan Chang, Kun-Lin Lin, Abhijeet Joshi
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 34:357-364
Electrical properties and microstructure of phosphorus (P) implanted p-type Si substrates were evaluated by four-point probe (4PP), Differential Hall Effect Metrology (DHEM), secondary ion mass spectrometry (SIMS) and transmission electron microscopy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::439726f405871cd7b735fa5653f7ce8d
https://doi.org/10.1109/tsm.2021.3074644
https://doi.org/10.1109/tsm.2021.3074644
Publikováno v:
ECS Transactions. 102:113-116
Differential Hall Effect Metrology (DHEM) technique was used to study dopant activation in n-Si and p-SiGe materials. n-type Si samples were prepared by P ion implantation followed by RTA at temperatures ranging from 750ºC to 950ºC. Junction depth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e5749362095c7111cb27f00008be644
https://doi.org/10.1149/10202.0113ecst
https://doi.org/10.1149/10202.0113ecst
Autor:
Abhijeet Joshi, Bulent M. Basol
Publikováno v:
EDFA Technical Articles. 22:10-16
Differential Hall effect metrology (DHEM) provides depth profiles of all critical electrical parameters through semiconductor layers at nanometer-level depth resolution. This article describes the relatively new method and shows how it is used to mea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41b9b9c3f3028b744a930e9a447c0329
https://doi.org/10.31399/asm.edfa.2020-4.p010
https://doi.org/10.31399/asm.edfa.2020-4.p010
Autor:
Bulent M. Basol, Abhijeet Joshi
Publikováno v:
ECS Transactions. 98:405-411
Contact resistivity at the metal-semiconductor interface is a strong function of the carrier concentration in the near surface. For next generation 2D/3D MOSFET transistors, industry has been investigating very highly doped materials (>1x1021cm-3) ap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f3ffbac6890a1325f6077666120b9e74
https://doi.org/10.1149/09805.0405ecst
https://doi.org/10.1149/09805.0405ecst
Autor:
Toshiyuki Tabata, Fabien Rozé, Louis Thuries, Sebastien Halty, Pierre-Edouard Raynal, Karim Huet, Fulvio Mazzamuto, Abhijeet Joshi, Bulent M. Basol, Pablo Acosta Alba, Sébastien Kerdilès
Publikováno v:
Applied Physics Express
Three-dimensional (3D) CMOS technology encourages the use of UV laser annealing (UV-LA) because the shallow absorption of UV light into materials and the process timescale typically from nanoseconds (ns) to microseconds (us) strongly limit the vertic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2d947990de49b549cfc92b1fd5335f7a
Autor:
Abhijeet Joshi, Bulent M. Basol
Publikováno v:
2021 20th International Workshop on Junction Technology (IWJT).
In advanced node transistors the contact resistance dominates parasitic resistance and negatively impacts power consumption and speed. Therefore, there is considerable efforts directed towards reducing source/drain (S/D) contact resistivity below 10
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06c3876b684a396b30084631c2cb5920
https://doi.org/10.23919/iwjt52818.2021.9609524
https://doi.org/10.23919/iwjt52818.2021.9609524