Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Bulent Arikan"'
Autor:
Bulent Arikan
Publikováno v:
Traces in Time, Vol 1 (2011)
The issue of emergent social complexity has long been debated in the anthropological literature. In the eastern Mediterranean context, the archaeological discussions of social complexity focused largely on societies that showed centralized administra
Externí odkaz:
https://doaj.org/article/089a0e548e154d38bf516e22b5f68bf7
Autor:
Lidón Gil‐Escrig, Isidora Susic, İlker Doğan, Valerio Zardetto, Mehrdad Najafi, Dong Zhang, Sjoerd Veenstra, Salar Sedani, Bulent Arikan, Selcuk Yerci, Henk J. Bolink, Michele Sessolo
Publikováno v:
Advanced Functional Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eab54893dc1fcf2b39a0e24634b91eb7
https://doi.org/10.1002/adfm.202214357
https://doi.org/10.1002/adfm.202214357
Autor:
Ahmet Emin Keçeci, Sümeyye Koçak Bütüner, Gence Bektaş, Gamze Kökbudak, Hasan Asav, Rasit Turan, Hasan Hüseyin Canar, Emine Hande Ciftpinar, Bulent Arikan
Publikováno v:
Renewable Energy. 179:2295-2299
Ion implanted PERC cells have already achieved power conversion efficiencies of about 20.0%. The process flows reported in the literature for the ion implanted PERC cells with commonly utilized Al2O3/SiNx rear passivation stack, which has the benefit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d25193ac7dfa55a0a571ad48dcdef1b
https://doi.org/10.1016/j.renene.2021.08.054
https://doi.org/10.1016/j.renene.2021.08.054
Publikováno v:
2020 2nd International Conference on Photovoltaic Science and Technologies (PVCon).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dea98fc9ccd7f78f4386837b9b426ec6
https://doi.org/10.1109/pvcon51547.2020.9757782
https://doi.org/10.1109/pvcon51547.2020.9757782
Publikováno v:
Superlattices and Microstructures. 120:15-21
WOS: 000445713700003
We report on the direct growth and characterization of type-II InAs/GaSb superlattice (T2SL) MWIR photodetector structure grown on a GaAs substrate by molecular beam epitaxy. The designed photodetector structure contains 140
We report on the direct growth and characterization of type-II InAs/GaSb superlattice (T2SL) MWIR photodetector structure grown on a GaAs substrate by molecular beam epitaxy. The designed photodetector structure contains 140
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dca965398b562ee9e9f62e6db629c7ee
https://doi.org/10.1016/j.spmi.2018.05.020
https://doi.org/10.1016/j.spmi.2018.05.020
Autor:
José Manuel Míguez Novoa, Volker Hoffmann, Eduardo Forniés, Laura Mendez, Marta Tojeiro, Fernando Ruiz, Manuel Funes, Carlos del Cañizo, David Fuertes Marrón, Nerea Dasilva Villanueva, Luis Jaime Caballero, Bülent Arıkan, Raşit Turan, Hasan Hüseyin Canar, Guillermo Sánchez Plaza
Publikováno v:
Frontiers in Photonics, Vol 5 (2024)
Upgraded metallurgical-grade silicon (UMG-Si) has the potential to reduce the cost of photovoltaic (PV) technology and improve its environmental profile. In this contribution, we summarize the extensive work made in the research and development of UM
Externí odkaz:
https://doaj.org/article/caa28f612445468d9c95f13492fa3f24
WOS: 000423857500001
We report on the growth and opto-electronic characterization of type-II InAs/GaSb superlattice (SL) mid-wavelength infrared pin photodetector grown on a GaAs substrate. AlSb interfacial misfit array was employed at the GaAs
We report on the growth and opto-electronic characterization of type-II InAs/GaSb superlattice (SL) mid-wavelength infrared pin photodetector grown on a GaAs substrate. AlSb interfacial misfit array was employed at the GaAs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f7e0db99086500fcf2c4476021b39f8f
https://hdl.handle.net/11421/16944
https://hdl.handle.net/11421/16944
WOS: 000360320000128
In this article, we report on the molecular beam epitaxy growth and characterization of a 140 period InAs/GaSb type-II superlattice structure designed for mid infrared detection. Thickness of a period was systematically alte
In this article, we report on the molecular beam epitaxy growth and characterization of a 140 period InAs/GaSb type-II superlattice structure designed for mid infrared detection. Thickness of a period was systematically alte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f94dd9ddb40489e010288da7d80178c1
https://aperta.ulakbim.gov.tr/record/80015
https://aperta.ulakbim.gov.tr/record/80015
WOS: 000362272600008
We report on the opto-electronic characterization of an InAs/GaSb superlattice (SL) midwave infrared p-i-n photodetector structure (pin-SL) in comparison with the same structure with no intentional doping (i-SL). Both struct
We report on the opto-electronic characterization of an InAs/GaSb superlattice (SL) midwave infrared p-i-n photodetector structure (pin-SL) in comparison with the same structure with no intentional doping (i-SL). Both struct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f732c7aa0620d7de3a013c83edd78d3e
https://hdl.handle.net/11421/16945
https://hdl.handle.net/11421/16945
Autor:
Uğur Serincan, Atilla Aydinli, Bulent Arikan, Rasit Turan, Kutlu Kutluer, Omer Salihoglu, Murat Kilinc, Tunay Tansel, B. Aslan, Yüksel Ergün
Publikováno v:
IEEE Photonics Technology Letters
WOS: 000302729800012
The authors describe the noise characterization of a mid-wavelength-infrared (MWIR) photodiode based on indium arsenide and gallium antimonide (InAs/GaSb) superlattice (SL), addressing the influence of different passivation
The authors describe the noise characterization of a mid-wavelength-infrared (MWIR) photodiode based on indium arsenide and gallium antimonide (InAs/GaSb) superlattice (SL), addressing the influence of different passivation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::de391adfd14a4f43b1ba5212e58cb2c2
https://doi.org/10.1109/lpt.2012.2188504
https://doi.org/10.1109/lpt.2012.2188504