Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Bulat F. Gabbasov"'
Autor:
Almaz L. Zinnatullin, Bulat F. Gabbasov, Nikolay M. Lyadov, Roman V. Yusupov, Rustam I. Khaibullin, Farit G. Vagizov
Publikováno v:
Crystals, Vol 12, Iss 8, p 1095 (2022)
In this work, we report on the endotaxial growth of α-Fe nanoparticles in the near-surface layer under high-fluence iron ion implantation of the single-crystal magnesium oxide substrate. Comprehensive Mössbauer effect and magnetometry studies show
Externí odkaz:
https://doaj.org/article/f58699d56a5c435ea6bbeac6b7d78d53
Autor:
Fadis F. Murzakhanov, Boris V. Yavkin, Georgiy V. Mamin, Sergei B. Orlinskii, Ivan E. Mumdzhi, Irina N. Gracheva, Bulat F. Gabbasov, Alexander N. Smirnov, Valery Yu. Davydov, Victor A. Soltamov
Publikováno v:
Nanomaterials, Vol 11, Iss 6, p 1373 (2021)
Optically addressable high-spin states (S ≥ 1) of defects in semiconductors are the basis for the development of solid-state quantum technologies. Recently, one such defect has been found in hexagonal boron nitride (hBN) and identified as a negativ
Externí odkaz:
https://doaj.org/article/24b328e967544092801b1ca55560041c
Autor:
Irina N. Gracheva, Fadis F. Murzakhanov, Georgy V. Mamin, Margarita A. Sadovnikova, Bulat F. Gabbasov, Evgeniy N. Mokhov, Marat R. Gafurov
The concept of optically addressable spin states of deep level defects in wide band gap materials is successfully applied for the development of quantum technologies. Recently discovered negatively charged boron vacancy defects (VB) in hexagonal boro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::55b8388b5abb0df9b902bf8ffaf87785
