Zobrazeno 1 - 10
of 107
pro vyhledávání: '"Bulakh, B.M."'
Publikováno v:
In Journal of Physics and Chemistry of Solids 2011 72(8):980-982
Publikováno v:
In Solid State Communications 2005 136(8):475-478
Autor:
Korsunska, N.O. *, Borkovska, L.V., Bulakh, B.M., Khomenkova, L.Yu., Kushnirenko, V.I., Markevich, I.V.
Publikováno v:
In Journal of Luminescence May 2003 102-103:733-736
Autor:
Torchynska, T. *, Aguilar-Hernandez, J., Morales Rodriguez, M., Mejia-Garcia, C., Contreras-Puente, G., Becerril Espinoza, F.G., Bulakh, B.M., Scherbina, L.V., Goldstein, Y., Many, A., Jedrzejewski, J.
Publikováno v:
In Journal of Physics and Chemistry of Solids April 2002 63(4):561-568
Autor:
Torchynska, T. *, Aguilar-Hernandez, J., Diaz Cano, A.I., Contreras-Puente, G., Becerril Espinoza, F.G., Vorobiev, Yu.V., Goldstein, Y., Many, A., Jedrzejewski, J., Bulakh, B.M., Scherbina, L.V.
Publikováno v:
In Physica B: Physics of Condensed Matter 2001 308:1108-1112
Autor:
Polupan, G.P. *, Torchynska, T.V., Palacios Gomez, J., Flores Gonzalez, H.A., Bacarril Espinoza, F.G., Ita Torre, A., Bulakh, B.M., Scherbina, L.V.
Publikováno v:
In Journal of Electron Spectroscopy and Related Phenomena 2001 114:235-241
Autor:
Korsunskaya, N.E. *, Kaganovich, E.B., Khomenkova, L.Yu., Bulakh, B.M., Dzhumaev, B.R., Beketov, G.V., Manoilov, E.G.
Publikováno v:
In Applied Surface Science 2000 166(1):349-353
Autor:
Torchynska, T.V *, Sheinkman, M.K, Korsunskaya, N.E, Khomenkovan, L.Yu, Bulakh, B.M, Dzhumaev, B.R, Many, A, Goldstein, Y, Savir, E
Publikováno v:
In Physica B: Physics of Condensed Matter 15 December 1999 273-274:955-958
Autor:
Primachenko, V.E, Kirillova, S.I., Manoilov, E.G., Kizyak, I.M., Bulakh, B.M., Chernobai, V.A., Venger, E.F.
Investigated in this work are por-Si/n-Si structures prepared by anodizing silicon in 1 % HF water solution, which was followed by natural aging in air and doping with Zn and Mn impurities. When aging, the oxide film of nanoelements in the above stru
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::4a9fcd89607a9154a5e41116f796506d
http://dspace.nbuv.gov.ua/handle/123456789/121543
http://dspace.nbuv.gov.ua/handle/123456789/121543
The photoluminescence spectra of porous silicon at 77 and 300 K and their transformation during aging were investigated. The competition of two radiative recombination channels that have a common excitation mechanism was observed. It is shown that on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1456::5ba7677ace95d2b86c782c2eade62183
http://dspace.nbuv.gov.ua/handle/123456789/120640
http://dspace.nbuv.gov.ua/handle/123456789/120640