Zobrazeno 1 - 10
of 398
pro vyhledávání: '"Buhrman, R. A."'
Autor:
Shi, Shengjie, Buhrman, R. A.
Since the discovery of the spin orbit torque (SOT) induced by spin Hall effect in heavy metals, much effort has been devoted to understanding the mechanism of the charge-to-spin conversion as well as to developing new schemes for high speed, low ener
Externí odkaz:
http://arxiv.org/abs/2204.07113
We present measurements of spin orbit torques generated by Ir as a function of film thickness in sputtered Ir/CoFeB and Ir/Co samples. We find that Ir provides a damping-like component of spin orbit torque with a maximum spin torque conductivity 1.4e
Externí odkaz:
http://arxiv.org/abs/2105.02787
Publikováno v:
Phys. Rev. Applied 15, 024059 (2021)
Spin-orbit torque can drive electrical switching of magnetic layers. Here, we report that at least for micrometer-sized samples there is no simple correlation between the efficiency of dampinglike spin-orbit torque ({\xi}_DL^j) and the critical switc
Externí odkaz:
http://arxiv.org/abs/2101.10521
Role of Dirac nodal lines and strain on the high spin Hall conductivity of epitaxial IrO2 thin films
Autor:
Bose, Arnab, Nelson, Jocienne N., Zhang, Xiyue S., Jain, Rakshit, Schlom, D. G., Ralph, D. C., Muller, D. A., Shen, K. M., Buhrman, R. A.
Publikováno v:
Applied Materials and Interfaces 2020
Since the discovery of a 'giant' spin Hall effect (SHE) in certain heavy metal elements there has been an intense effort to identify and develop new and technologically viable, heavy-metal-based thin film materials that could generate spin currents w
Externí odkaz:
http://arxiv.org/abs/2006.04365
Publikováno v:
Phys. Rev. Applied 13, 034038 (2020)
We experimentally investigate the origin of the two-magnon scattering (TMS) in heavy-metal (HM)/ferromagnet (FM)/oxide heterostructures (FM = Co, Ni81Fe19, or Fe60Co20B20) by varying the materials located above and below the FM layers. We show that s
Externí odkaz:
http://arxiv.org/abs/2001.00300
Publikováno v:
Advanced Electronic Materials,1901131 (2020)
Many key electronic technologies (e.g., large-scale computing, machine learning, and superconducting electronics) require new memories that are fast, reliable, energy-efficient, and of low-impedance at the same time, which has remained a challenge. N
Externí odkaz:
http://arxiv.org/abs/1910.11896
Autor:
Zhu, Lijun, Buhrman, R. A.
Publikováno v:
Phys. Rev. Applied 12, 051002 (2019)
We report a comprehensive study of the maximization of the spin Hall ratio ({\theta}SH) in Pt thin films by the insertion of sub-monolayer layers of Ti to decrease carrier lifetime while minimizing the concurrent reduction in the spin Hall conductivi
Externí odkaz:
http://arxiv.org/abs/1908.06528
Publikováno v:
Phys. Rev. Applied 11, 061004 (2019)
Increasing dampinglike spin-orbit torque (SOT) is both of fundamental importance for enabling new research into spintronics phenomena and also technologically urgent for advancing low-power spin-torque memory, logic, and oscillator devices. Here, we
Externí odkaz:
http://arxiv.org/abs/1904.07800
Publikováno v:
Phys. Rev. Lett. 122, 077201 (2019)
Despite intense efforts it has remained unresolved whether and how interfacial spin-orbit coupling (ISOC) affects spin transport across heavy metal (HM)/ferromagnet (FM) interfaces. Here we report conclusive experiment evidence that the ISOC at HM/FM
Externí odkaz:
http://arxiv.org/abs/1901.03632
Autor:
Ou, Yongxi, Wang, Zhe, Chang, Celesta S., Nair, Hari P., Paik, Hanjong, Reynolds, Neal, Ralph, D. C., Muller, D. A., Schlom, D. G., Buhrman, R. A.
Publikováno v:
Nano Lett. 2019, 19, 6, 3663-3670
Spin-orbit torques (SOT) in thin film heterostructures originate from strong spin-orbit interactions (SOI) that, in the bulk, generate a spin current as the result of extrinsic spin-dependent, skew or/and side-jump, scattering, or in the intrinsic ca
Externí odkaz:
http://arxiv.org/abs/1810.11136