Zobrazeno 1 - 10
of 93
pro vyhledávání: '"Buguo Wang"'
Autor:
Buguo Wang, Jong Su Kim, John Kouvetakis, Yung Kee Yeo, Thomas R. Harris, Mee-Yi Ryu, Michael R. Hogsed, Sang Jo Lee
Publikováno v:
Journal of the Korean Physical Society. 75:577-585
The temperature (T)-dependent photoluminescence (PL) from Ge1−ySny (y = 4.3%–9.0%) alloys grown on Ge-buffered Si substrates was studied as a function of the Sn content. The PL from Ge1−ySny alloys with high Sn contents (≥7.0%) exhibited the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58d3f5b23dc29af692bc8a0d0e1cf95e
https://doi.org/10.3938/jkps.75.577
https://doi.org/10.3938/jkps.75.577
Publikováno v:
Thin Solid Films. 673:63-71
Temperature-dependent photoluminescence (PL) of two sets of ternary samples with fixed tin concentrations of ~5.2% (Ge0.924Si0.024Sn0.052, and Ge0.911Si0.036Sn0.053) and ~7.3% (Ge0.900Si0.027Sn0.073, and Ge0.888Si0.04Sn0.072) were measured along with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b50d5c174a92469361d52617b4a21ce
https://doi.org/10.1016/j.tsf.2019.01.022
https://doi.org/10.1016/j.tsf.2019.01.022
Autor:
Quentin Hudspeth, James Williams, Tuan T. Tran, Lachlan A. Smillie, Yining Liu, Buguo Wang, Renaud A. Bruce, Jeffrey M. Warrender, Jay Mathews
Direct-bandgap germanium-tin (Ge-Sn) alloys are highly sought-after materials for applications in silicon photonic integrated circuits. Other than crystal quality, two main factors determine the transition from the indirect to direct bandgap: the hig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::75d618216de741df280d1e02f27ff7cc
http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-418790
http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-418790
Publikováno v:
Nano Research. 11:3864-3876
Simultaneous epitaxial growth of film and nanowire array on a substrate is of both scientific significance and practical importance for nanoscale optoelectronics. Nevertheless, in situ building conducting connection between individually isolated nano
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f0853bace07fd4294cae81fdcd5810b
https://doi.org/10.1007/s12274-017-1960-1
https://doi.org/10.1007/s12274-017-1960-1
Publikováno v:
Thin Solid Films. 654:77-84
Electrical characteristics and deep-level transient spectroscopy of a Ge 0.873 Si 0.104 Sn 0.023 photodiode grown by ultra-high vacuum chemical vapor deposition on a p++ Ge platform are investigated. The photodiode shows good rectifying I-V character
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7d577736dde49431472a0f3109dede4
https://doi.org/10.1016/j.tsf.2018.03.071
https://doi.org/10.1016/j.tsf.2018.03.071
Autor:
G. M. Foster, Leonard J. Brillson, David C. Look, Buguo Wang, Alexander Jarjour, Hantian Gao, Martin W. Allen, A. Hyland, William Ruane, Marius Grundmann, H. von Wenckstern, Jon W. Cox
Publikováno v:
Journal of Electronic Materials. 47:4980-4986
Wide-bandgap semiconductors are now leading the way to new physical phenomena and device applications at nanoscale dimensions. The impact of defects on the electronic properties of these materials increases as their size decreases, motivating new tec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee9c14c7f515bac2eaa51e0679c4ec24
https://doi.org/10.1007/s11664-018-6214-9
https://doi.org/10.1007/s11664-018-6214-9
Autor:
George Peterson, Nicholas J. Quartemont, Buguo Wang, C. B. Yeamans, Darren E. Holland, Colton Moran, Brandon N. Woodworth, Adib J. Samin, James C. Petrosky, James E. Bevins
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 1016:165777
This paper describes the ATHENA platform, an energy tuning assembly, which was developed to spectrally shape the National Ignition Facility (NIF) deuterium–tritium fusion neutron source to a thermonuclear (fusion) plus prompt fission neutron spectr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47dfc669f0763f0948bded584e6905de
https://doi.org/10.1016/j.nima.2021.165777
https://doi.org/10.1016/j.nima.2021.165777
Publikováno v:
Journal of Electronic Materials. 47:604-611
Thermally stimulated current (TSC), thermally stimulated depolarization current (TSDC), and thermally stimulated luminescence (TSL) spectroscopies were combined to study trapping phenomena in undoped bulk SrTiO3 crystals. Electrical measurements were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19e348f07b355e6b5a55ca4e842d0653
https://doi.org/10.1007/s11664-017-5818-9
https://doi.org/10.1007/s11664-017-5818-9
Autor:
Lachlan A. Smillie, Tuan T. Tran, Jay Mathews, Quentin Hudspeth, James Williams, Renaud A. Bruce, Buguo Wang, Yining Liu, Jeffrey Warrender
Publikováno v:
2019 IEEE Photonics Society Summer Topical Meeting Series (SUM).
Room temperature photoluminescence (PL) was observed from GeSn layers fabricated by ion implantation of Sn into bulk Ge followed by pulsed laser melting using an Nd:YAG laser at 355 nm. PL measurements indicate regions of high-crystalline quality wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::152ab7c6705047e566ac3b0cc08eb5bc
https://doi.org/10.1109/phosst.2019.8794879
https://doi.org/10.1109/phosst.2019.8794879
Publikováno v:
Journal of Applied Physics; 8/28/2016, Vol. 120 Issue 8, p085706-1-085706-8, 8p, 1 Chart, 5 Graphs