Zobrazeno 1 - 10
of 57
pro vyhledávání: '"Buerger, Danilo"'
Autor:
Shuai, Yao, Ou, Xin, Wu, Chuangui, Zhang, Wanli, Zhou, Shengqiang, Buerger, Danilo, Reuther, Helfried, Slesazeck, Stefan, Mikolajick, Thomas, Helm, Manfred, Schmidt, Heidemarie
Publikováno v:
J. Appl. Phys. 111, 07D906 (2012)
BiFeO3 thin films have been deposited on Pt/sapphire and Pt/Ti/SiO2/Si substrates with pulsed laser deposition using the same growth conditions, respectively. Au was sputtered as the top electrode. The microscopic structure of the thin film varies by
Externí odkaz:
http://arxiv.org/abs/1209.5868
Autor:
Shuai, Yao, Zhou, Shengqiang, Wu, Chuangui, Zhang, Wanli, Bürger, Danilo, Slesazeck, Stefan, Mikolajick, Thomas, Helm, Manfred, Schmidt, Heidemarie
Publikováno v:
Appl. Phys. Express 4 (2011) 095802
BiFeO3 thin films have been grown on Pt/Ti/SiO2/Si substrates with pulsed laser deposition using Au as the top electrode. The resistive switching property of the Au/BiFeO3/Pt stack has been significantly improved by carefully tuning the oxygen pressu
Externí odkaz:
http://arxiv.org/abs/1108.3454
Publikováno v:
J. Appl. Phys. 109, 124117 (2011)
Nonvolatile bipolar resistive switching has been observed in an Au/BiFeO3/Pt structure, where a Schottky contact and a quasi-Ohmic contact were formed at the Au/BiFeO3 and BiFeO3/Pt interface, respectively. By changing the polarity of the external vo
Externí odkaz:
http://arxiv.org/abs/1105.3827
Autor:
Shuai, Yao, Zhou, Shengqiang, Streit, Stephan, Reuther, Helfried, Bürger, Danilo, Slesazeck, Stefan, Mikolajick, Thomas, Helm, Manfred, Schmidt, Heidemarie
Publikováno v:
Appl. Phys. Lett. 98, 232901 (2011)
BiFeO3 thin films were grown on Pt/c-sapphire substrates by pulsed laser deposition with different growth rates. With increasing growth rate the leakage current is decreased and the conduction mechanism changes from bulk-limited Poole-Frenkel emissio
Externí odkaz:
http://arxiv.org/abs/1105.3825
Autor:
Shuai, Yao, Zhou, Shengqiang, Bürger, Danilo, Reuther, Helfried, Skorupa, Ilona, John, Varun, Helm, Manfred, Schmidt, Heidemarie
Publikováno v:
J. Appl. Phys. 109, 084105 (2011)
Single-phase perovskite 5 at.% Mn-doped and undoped polycrystalline BaTiO3 thin films have been grown under different oxygen partial pressures by pulsed laser deposition on platinum-coated sapphire substrates. Ferroelectricity is only observed for th
Externí odkaz:
http://arxiv.org/abs/1104.5103
Autor:
Zhou, Shengqiang, Bürger, Danilo, Skorupa, Wolfgang, Oesterlin, Peter, Helm, Manfred, Schmidt, Heidemarie
Publikováno v:
Appl. Phys. Lett. 96, 202105 (2010)
In the present work, we have prepared Mn-doped Ge using different annealing approaches after Mn ion implantation, and obtained samples with hole concentrations ranging from 10^18 to 2.1x10^20 cm^-3, the latter being the highest reported so far. Based
Externí odkaz:
http://arxiv.org/abs/1005.4325
Autor:
Zhou, Shengqiang, Buerger, Danilo, Muecklich, Arndt, Baumgart, Christine, Skorupa, Wolfgang, Timm, Carsten, Oesterlin, Peter, Helm, Manfred, Schmidt, Heidemarie
Publikováno v:
Phys. Rev. B 81, 165204 (2010)
We report the fabrication of Ge:Mn ferromagnetic semiconductors by Mn-ion implantation into Ge followed by pulsed laser annealing. Benefiting from the short time annealing, the hole concentration in Mn-implanted Ge has been increased by two orders of
Externí odkaz:
http://arxiv.org/abs/1004.0568
Publikováno v:
Appl. Phys. Lett. 95, 172103 (2009)
Taking Mn doped Germanium as an example, we evoke the consideration of a two-band-like conduction in diluted ferromagnetic semiconductor (FMS). The main argument for claiming Ge:Mn as a FMS is the occurrence of the anomalous Hall effect (AHE). Usuall
Externí odkaz:
http://arxiv.org/abs/0910.1981
Autor:
Zhou, Shengqiang, Berndt, Markus, Buerger, Danilo, Heera, Viton, Potzger, Kay, Abrasonis, Gintautas, Radnoczi, Gyoergy, Kovacs, Gyoergy J., Kolitsch, Andreas, Helm, Manfred, Fassbender, Juergen, Moeller, Wolfhard, Schmidt, Heidemarie
The magneto-transport properties of nanocomposite C:Co (15 and 40 at.% Co) thin films are investigated. The films were grown by ion beam co-sputtering on thermally oxidized silicon substrates in the temperature range from 200 to 500 degC. Two major e
Externí odkaz:
http://arxiv.org/abs/0908.0127
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