Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Budnitsky, D.L."'
Autor:
Ayzenshtat, G.I., Budnitsky, D.L., Koretskaya, O.B., Novikov, V.A., Mokeev, D.Y., Okaevich, L.S., Tolbanov, O.P., Tyazhev, A.V. *
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, A 21 September 2004 531(1-2):121-124
Autor:
Tyazhev, A.V *, Budnitsky, D.L, Koretskay, O.B, Novikov, V.A, Okaevich, L.S, Potapov, A.I, Tolbanov, O.P, Vorobiev, A.P
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, A 21 August 2003 509(1-3):34-39
Autor:
Ayzenshtat, A.I., Budnitsky, D.L., Koretskaya, O.B., Okaevich, L.S. *, Novikov, V.A., Potapov, A.I., Tolbanov, O.P., Tyazhev, A.V., Vorobiev, A.P.
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, A 2002 494(1):120-127
Autor:
Ayzenshtat, G.I, Budnitsky, D.L, Koretskaya, O.B, Novikov, V.A, Okaevich, L.S, Potapov, A.I, Tolbanov, O.P, Tyazhev, A.V *, Vorobiev, A.P
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, A 2002 487(1):96-101
Autor:
Budnitsky, D.L., Germogenov, V.P. *, Guschin, S.M., Larionov, A.A., Porokhovnichenko, L.P., Potapov, A.I., Tolbanov, O.P., Vorobiev, A.P.
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, A 2001 466(1):33-38
Autor:
Ayzenshtat, G.I., Bakin, N.N., Budnitsky, D.L., Drugova, E.P., Germogenov, V.P., Khludkov, S.S., Koretskaya, O.B., Okaevich, L.S., Porokhovnichenko, L.P., Potapov, A.I., Smith, K.M., Tolbanov, O.P. *, Tyazhev, A.V., Vilisova, M.D., Vorobiev, A.P.
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, A 2001 466(1):25-32
Publikováno v:
2005 Siberian Conference on Control & Communications; 2005, p85-89, 5p
Publikováno v:
2005 Siberian Conference on Control & Communications; 2005, p80-84, 5p
Autor:
Ayzenshtat, A.I., Budnitsky, D.L., Koretskaya, O.B., Okaevich, L.S., Novikov, V.A., Potapov, A.I., Tolbanov, O.P., Tyazhev, A.V., Vorobiev, A.P.
Publikováno v:
12th International Conference on Semiconducting & Insulating Materials, 2002. SIMC-XII-2002; 2002, p35-38, 4p
Publikováno v:
12th International Conference on Semiconducting & Insulating Materials, 2002. SIMC-XII-2002; 2002, p23-26, 4p