Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Bucknell C. Webb"'
Autor:
Bucknell C. Webb, Agno Marlon, Steven L. Wright, Katsuyuki Sakuma, Jiamin Ni, Ken Latzko, Xiao Hu Liu, John U. Knickerbocker, James A. Tornello, Stephen W. Bedell, Paul A. Lauro, Huan Hu
Publikováno v:
IEEE Sensors Journal. 19:7868-7874
Wearable sensors can provide important human physiology and activity data and therefore have promising applications in healthcare, entertainment, and security. Here, we report the design, fabrication, and characterizations of a thin silicon film sens
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::610bd2c7a4332a5d4401129304031fa0
https://doi.org/10.1109/jsen.2019.2917278
https://doi.org/10.1109/jsen.2019.2917278
Autor:
John U. Knickerbocker, Katsuyuki Sakuma, Stephen Heisig, Bucknell C. Webb, Rajeev Narayanan, Jeffrey Rogers, Avner Abrami
Publikováno v:
2019 IEEE 69th Electronic Components and Technology Conference (ECTC).
This paper describes the sensor, electronics, software, modeling, and characterization of a fingernail-mounted RF-connected wearable strain sensor system that measures nail deformation from finger movement. Applications to health monitoring and human
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19e04ca28bbc69bc7a6736a46240f9b2
https://doi.org/10.1109/ectc.2019.00047
https://doi.org/10.1109/ectc.2019.00047
Autor:
John U. Knickerbocker, Agno Marlon, Huan Hu, Stephen W. Bedell, Steven L. Wright, Katsuyuki Sakuma, Bucknell C. Webb, Ken Latzko
Publikováno v:
2018 International Flexible Electronics Technology Conference (IFETC).
In this research study, we present comprehensive characterizations of flexible silicon sensors fabricated using controlled spalling which uses fracture to produce thin films of single-crystal silicon directly from a bulk substrate. We characterized t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2396ee4b753e792ef2bee5faefc0a1e0
https://doi.org/10.1109/ifetc.2018.8583971
https://doi.org/10.1109/ifetc.2018.8583971
Autor:
Philipp Herget, Naigang Wang, Gary M. Decad, Lubomyr T. Romankiw, William J. Gallagher, Eugene J. O'Sullivan, Robert E. Fontana, Bucknell C. Webb
Publikováno v:
IEEE Transactions on Magnetics. 49:4137-4143
Successful implementation of on-chip power conversion using ferromagnetic inductors requires both high power efficiency and high power density. The theoretical limits to power density and efficiency possible with thin film ferromagnetic inductors in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee9b76114295cfea338553edbbf6564b
https://doi.org/10.1109/tmag.2013.2240442
https://doi.org/10.1109/tmag.2013.2240442
Autor:
Naigang Wang, Noah Sturcken, Lubomyr T. Romankiw, William J. Gallagher, Bucknell C. Webb, Philipp Herget, Kenneth L. Shepard, Robert E. Fontana, Eugene J. O'Sullivan
Publikováno v:
ECS Transactions. 50:93-105
Thin-film ferromagnetic inductors show great potential as the energy storage element for integrated circuits containing on-chip power management. In order to achieve the high energy storage required for power management, on-chip inductors require rel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7dc3b6a76d75408aa2061c204887551
https://doi.org/10.1149/05010.0093ecst
https://doi.org/10.1149/05010.0093ecst
Autor:
Bucknell C. Webb, Naigang Wang, William J. Gallagher, Robert E. Fontana, Philipp Herget, Gary M. Decad, Angel V. Peterchev, Luca P. Carloni, Noah Sturcken, Lubomyr T. Romankiw, Michele Petracca, Ryan R. Davies, Ioannis Kymissis, Kenneth L. Shepard, Eugene J. O'Sullivan
Publikováno v:
IEEE Journal of Solid-State Circuits. 48:244-254
An integrated voltage regulator (IVR) is presented that uses custom fabricated thin-film magnetic power inductors. The inductors are fabricated on a silicon interposer and integrated with a multi-phase buck converter IC by 2.5D chip stacking. Several
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40f623ab9fe639a0191a49d2e33d1372
https://doi.org/10.1109/jssc.2012.2221237
https://doi.org/10.1109/jssc.2012.2221237
Autor:
Philipp Herget, Robert E. Fontana, Gary M. Decad, Bucknell C. Webb, Naigang Wang, William J. Gallagher, Lubomyr T. Romankiw, Eugene J. O'Sullivan, Xiaolin Hu
Publikováno v:
IEEE Transactions on Magnetics. 48:4119-4122
Saturation in thin film coupled magnetic inductors was measured as a function of dc current in both windings. A simple mathematical model was created to approximate the inductor saturation level in the presence of the two currents. The model was comp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19d8e15e18522f75a051816b76c18143
https://doi.org/10.1109/tmag.2012.2201140
https://doi.org/10.1109/tmag.2012.2201140
Autor:
Cameron E. Luce, Toshikazu Ishigaki, Takeshi Ueda, Jeff Gambino, Kitaek Kang, Daniel S. Vanslette, Bucknell C. Webb, Woo Sik Yoo
Publikováno v:
ECS Transactions. 35:105-115
Stress in Si adjacent to W-filled TSVs has been measured by multiwavelength Raman spectroscopy (probe depth ranging from 290 to 645 nm) and compared to finite element modeling. The stress in Si from the TSVs increases with TSV width and is almost con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c10b7d6ee380c334abdf5e9dac23773b
https://doi.org/10.1149/1.3568852
https://doi.org/10.1149/1.3568852
Autor:
Bucknell C. Webb, Paul S. Andry
Publikováno v:
2015 IEEE 65th Electronic Components and Technology Conference (ECTC).
Temporary wafer bonding and debonding techniques are becoming ubiquitous in the world of 2.5D and 3D technology. After a decade of research and development, two room-temperature debonding techniques have emerged as industry front-runners: laser-assis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88faaf56c7f448511f2c12bd75d33bc9
https://doi.org/10.1109/ectc.2015.7159784
https://doi.org/10.1109/ectc.2015.7159784
Publikováno v:
IRPS
Addressable transistor arrays (∼20,000 devices) provide an attractive test vehicle to study TSV/FET proximity effects in a statistically meaningful way. FET/TSV proximity effect studies have been performed at the 45 nm node using a dense addressabl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82ab884eda6cc69c6025b6e3005089fe
https://doi.org/10.1109/irps.2015.7112772
https://doi.org/10.1109/irps.2015.7112772