Zobrazeno 1 - 10
of 230
pro vyhledávání: '"Buca, Dan"'
Autor:
Liu, Shang, Liang, Yunfan, Zhao, Haochen, Eldose, Nirosh M., Bae, Jin-Hee, Concepcion, Omar, Jin, Xiaochen, Chen, Shunda, Bikmukhametov, Ilias, Akey, Austin, Cline, Cory T., Covian, Alejandra Cuervo, Wang, Xiaoxin, Li, Tianshu, Zeng, Yuping, Buca, Dan, Yu, Shui-Qing, Salamo, Gregory J., Zhang, Shengbai, Liu, Jifeng
Atomic short-range order (SRO) in direct-bandgap GeSn for infrared photonics has recently attracted attention due to its notable impact on band structures. However, the SRO in GeSn thin films grown by different methods have hardly been compared. This
Externí odkaz:
http://arxiv.org/abs/2407.02767
Autor:
Corley-Wiciak, Agnieszka Anna, Ryzhak, Diana, Zoellner, Marvin Hartwig, Manganelli, Costanza Lucia, Concepción, Omar, Skibitzki, Oliver, Grützmacher, Detlev, Buca, Dan, Capellini, Giovanni, Spirito, Davide
Publikováno v:
Phys. Rev. Mater. 8 (2024) 023801
Temperature dependence of vibrational modes in semiconductors depends on lattice thermal expansion and anharmonic phonon-phonon scattering. Evaluating the two contributions from experimental data is not straightforward, especially for epitaxial layer
Externí odkaz:
http://arxiv.org/abs/2402.02967
Autor:
Corley-Wiciak, Agnieszka Anna, Chen, Shunda, Concepción, Omar, Zoellner, Marvin Hartwig, Grützmacher, Detlev, Buca, Dan, Li, Tianshu, Capellini, Giovanni, Spirito, Davide
Publikováno v:
PhysRevApplied. 20 (2023) 024021
The local ordering of atoms in alloys directly has a strong impact on their electronic and optical properties. This is particularly relevant in nonrandom alloys, especially if they are deposited using far from the equilibrium processes, as is the cas
Externí odkaz:
http://arxiv.org/abs/2305.06005
Autor:
Sonntag, Jens, Goldsche, Matthias, Khodkov, Tymofiy, Verbiest, Gerard, Reichardt, Sven, Driesch, Nils von den, Buca, Dan, Stampfer, Christoph
Publikováno v:
20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII), pp. 266-269 (2019)
Here, we present a micro-electromechanical system (MEMS) for the investigation of the electromechanical coupling in graphene and potentially related 2D materials. Key innovations of our technique include: (1) the integration of graphene into silicon-
Externí odkaz:
http://arxiv.org/abs/2103.13652
Autor:
Moutanabbir, Oussama, Assali, Simone, Gong, Xiao, O'Reilly, Eoin, Broderick, Chris, Marzban, Bahareh, Witzens, Jeremy, Du, Wei, Yu, Shui-Qing, Chelnokov, Alexei, Buca, Dan, Nam, Donguk
(Si)GeSn semiconductors are finally coming of age after a long gestation period. The demonstration of device quality epi-layers and quantum-engineered heterostructures has meant that tunable all-group IV Si-integrated infrared photonics is now a real
Externí odkaz:
http://arxiv.org/abs/2101.03245
Autor:
Sun, Jingxuan, Han, Yi, Junk, Yannik, Concepción, Omar, Bae, Jin-Hee, Grützmacher, Detlev, Buca, Dan, Zhao, Qing-Tai
Publikováno v:
In Solid State Electronics January 2024 211
Publikováno v:
in Proc. 2020 IEEE Photon. Soc. Sum. Top. Meet. (SUM)
We report on the design of a waveguide coupled GeSn microdisk-laser cavity in which the germanium virtual substrate serving as a template for GeSn growth is repurposed for the definition of passive on-chip interconnection waveguides. A main challenge
Externí odkaz:
http://arxiv.org/abs/2006.06381
Autor:
Driesch, Nils von den, Wirths, Stephan, Troitsch, Rene, Mussler, Gregor, Breuer, Uwe, Moutanabbir, Oussama, Grützmacher, Detlev, Buca, Dan
Publikováno v:
Phys. Rev. Materials 4, 033604 (2020)
Germanium-Tin (GeSn) alloys have emerged as a promising material for future optoelectronics, energy harvesting and nanoelectronics owing to their direct bandgap and compatibility with existing Si-based electronics. Yet, their metastability poses sign
Externí odkaz:
http://arxiv.org/abs/1911.02334
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Akademický článek
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