Výsledky vyhledávání - "Bu-Wen Cheng"

Akademický článek

Near-Infrared Femtosecond Laser for Studying the Strain in $\hbox{Si}_{1\hbox{-}{\rm x}}\hbox{Ge}_{\rm x}$ Alloy Films via Second-Harmonic Generation

Autor: Ji-Hong Zhao, Bu-Wen Cheng, Qi-Dai Chen, Wen Su, Ying Jiang, Zhan-Guo Chen, Gang Jia, Hong-Bo Sun

Publikováno v: IEEE Photonics Journal, Vol 2, Iss 6, Pp 974-980 (2010)

The second-harmonic generation (SHG) from Si1-xGex alloy films has been investigated by near-infrared femtosecond laser. Recognized by s-out polarized SHG intensity versus rotational angle of sample, the crystal symmetry of the fully strained Si0.83G

Externí odkaz: https://doaj.org/article/2419e4abbb6c46c1880e83714f6b6d5d

Zobrazit plný text záznamu

Evidence of Pure Spin-Current Generated by Spin Pumping in Interface-Localized States in Hybrid Metal–Silicon–Metal Vertical Structures

Publikováno v: Nano Letters
Nano Letters, 2019, 19 (1), pp.90-99. ⟨10.1021/acs.nanolett.8b03386⟩
Nano Letters, American Chemical Society, 2019, 19 (1), pp.90-99. ⟨10.1021/acs.nanolett.8b03386⟩

International audience; Due to the difficulty of growing high-quality semiconductors on ferromagnetic metals, the study of spin diffusion transport in Si was limited to lateral geometry devices. In this work, by using an ultrahigh-vacuum wafer-bondin

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::28ba6f184b9afde3157e7a864d69fe0f
https://univ-rennes.hal.science/hal-01987996

Zobrazit plný text záznamu

Long-Wavelength SiGe/Si MQW Resonant-Cavity-Enhanced Photodiodes (RCE-PD)

Autor: Bu Wen Cheng, Jin Zhong Yu, Qi Ming Wang, Cheng Li

Publikováno v: Solid State Phenomena. :255-262

Si1-xGex/Si optoelectronic devices are promising for the monolithic integration with silicon-based microelectronics. SiGe/Si MQW RCE-PD (Resonant-Cavity-Enhanced photodiodes) with different structures were investigated in this work. Design and fabric

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::369b9ca1ad278e8703f274cb444cc27b
https://doi.org/10.4028/www.scientific.net/ssp.95-96.255

Zobrazit plný text záznamu

1.55-μm Ge islands resonant-cavity-enhanced narrowband detector

Autor: Bu Wen Cheng, Rong Wei Mao, Chuan Bo Li, Q. M. Wang, Yu Hua Zuo, Jin Zhong Yu

Publikováno v: SPIE Proceedings.

The high quality Ge islands material with 1.55 mu m photo-response grown on Sol substrate is reported. Due to the modulation of the cavity formed by the mirrors at the surface and the buried SiO2 interface, seven sharp and strong peaks with narrow li

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f26fded09cd6783fe861f4a083a22b2c
https://doi.org/10.1117/12.584260

Zobrazit plný text záznamu

GeSi modulator based on two-mode interference

Autor: Ya-Ming Li, Bu-Wen Cheng

Publikováno v: Applied Optics. 53:221

A GeSi modulator based on two-mode interference is designed in this study. A GeSi layer with a height of 0.22 μm is introduced to decrease the optical power overlap of the two modes. A doping region in which the free carrier plasma dispersion effect

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b2d9c6ce8eb39585f0d351216f0efbd8
https://doi.org/10.1364/ao.53.000221

Zobrazit plný text záznamu

Efficient evanescent coupling design for GeSi electro-absorption modulator

Autor: Bu-Wen Cheng, Ya-Ming Li

Publikováno v: Chinese Physics B. 22:124209

Efficient coupling from the silicon waveguide to the GeSi layer is the key to success in the GeSi electro-absorption (EA) modulator based on evanescent coupling. A lateral taper in the upper GeSi layer has room for increasing the modulating efficienc

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::327b89de014bc9728ea95059bb61a737
https://doi.org/10.1088/1674-1056/22/12/124209

Zobrazit plný text záznamu