Influence of the carrier gas composition on morphology, dislocations, and microscopic luminescence properties of selectively grown GaN by hydride vapor phase epitaxy.

Autor: Wagner, V., Parillaud, O., Bu¨hlmann, H. J., Ilegems, M., Gradecak, S., Stadelmann, P., Riemann, T., Christen, J.

Publikováno v: Journal of Applied Physics; 8/1/2002, Vol. 92 Issue 3, p1307, 10p, 4 Black and White Photographs, 5 Diagrams, 6 Graphs