Zobrazeno 1 - 10
of 48
pro vyhledávání: '"Bu, Kunliang"'
Autor:
Li, Weitang, Yin, Zhi, Li, Xiaoran, Ma, Dongqiang, Yi, Shuang, Zhang, Zhenxing, Zou, Chenji, Bu, Kunliang, Dai, Maochun, Yue, Jie, Chen, Yuzong, Zhang, Xiaojin, Zhang, Shengyu
Quantum computing, with its superior computational capabilities compared to classical approaches, holds the potential to revolutionize numerous scientific domains, including pharmaceuticals. However, the application of quantum computing for drug disc
Externí odkaz:
http://arxiv.org/abs/2401.03759
Autor:
Bu, Kunliang, Huai, Sainan, Zhang, Zhenxing, Li, Dengfeng, Li, Yuan, Hu, Jingjing, Yang, Xiaopei, Dai, Maochun, Cai, Tianqi, Zheng, Yi-Cong, Zhang, Shengyu
The unique property of tantalum (Ta), particularly its long coherent lifetime in superconducting qubits and its exceptional resistance to both acid and alkali, makes it promising for superconducting quantum processors. It is a notable advantage to ac
Externí odkaz:
http://arxiv.org/abs/2401.03537
Autor:
Zong, Zhiwen, Huai, Sainan, Cai, Tianqi, Jin, Wenyan, Zhan, Ze, Zhang, Zhenxing, Bu, Kunliang, Sui, Liyang, Fei, Ying, Zheng, Yicong, Zhang, Shengyu, Wu, Jianlan, Yin, Yi
As a valid tool for solving ground state problems, imaginary time evolution (ITE) is widely used in physical and chemical simulations. Different ITE-based algorithms in their quantum counterpart have recently been proposed and applied to some real sy
Externí odkaz:
http://arxiv.org/abs/2303.01098
Autor:
Wu, Zongxiu, Bu, Kunliang, Zhang, Wenhao, Fei, Ying, Zheng, Yuan, Gao, Jingjing, Luo, Xuan, Liu, Zheng, Sun, Yu-ping, Yin, Yi
Publikováno v:
Phys. Rev. B 105, 035109 (2022)
New theoretical proposals and experimental findings on transition metal dichalcogenide 1T-TaS$_2$ have revived interests in its possible Mott insulating state. We perform a comprehensive scanning tunneling microscopy and spectroscopy experiment on di
Externí odkaz:
http://arxiv.org/abs/2105.08663
Autor:
Zhang, Wenhao, Wu, Zongxiu, Bu, Kunliang, Fei, Ying, Zheng, Yuan, Gao, Jingjing, Luo, Xuan, Liu, Zheng, Sun, Yu-ping, Yin, Yi
Publikováno v:
Phys. Rev. B 105, 035110 (2022)
The transition metal dichalcogenides 1T-TaS$_2$ and 1T-TaSe$_2$ have been extensively studied for the complicated correlated electronic properties. The origin of different surface electronic states remains controversial. We apply scanning tunneling m
Externí odkaz:
http://arxiv.org/abs/2105.08652
Autor:
Li, Yupeng, Wu, Zhongxiu, Zhou, Jingang, Bu, Kunliang, Xu, Chenchao, Qiao, Lei, Li, Miaocong, Bai, Hua, Ma, Jiang, Tao, Qian, Cao, Chao, Yin, Yi, Xu, Zhu-An
Coexistence of topological bands and charge density wave (CDW) in topological materials has attracted immense attentions because of their fantastic properties, such as axionic-CDW, three-dimensional quantum Hall effect, etc. In this work, a nodal-lin
Externí odkaz:
http://arxiv.org/abs/2011.06740
Autor:
Bu, Kunliang, Zhang, Wenhao, Fei, Ying, Wu, Zongxiu, Zheng, Yuan, Gao, Jingjing, Luo, Xuan, Sun, Yu-Ping, Yin, Yi
Publikováno v:
Communications Physics 2, 146 (2019)
Tuning the electronic properties of a matter is of fundamental interest in scientific research as well as in applications. Recently, the Mott insulator-metal transition has been reported in a pristine layered transition metal dichalcogenides 1T-TaS$_
Externí odkaz:
http://arxiv.org/abs/2005.13311
Autor:
Bu, Kunliang, Wang, Bo, Zhang, Wenhao, Fei, Ying, Zheng, Yuan, Ai, Fangzhou, Wu, Zongxiu, Wang, Qisi, Wo, Hongliang, Zhao, Jun, Jin, Chuanhong, Yin, Yi
Publikováno v:
Phys. Rev. B 100, 155127 (2019)
We apply high resolution scanning tunneling microscopy to study intrinsic defect states of bulk FeSe. Four types of intrinsic defects including the type I dumbbell, type II dumbbell, top-layer Se vacancy and inner-layer Se-site defect are extensively
Externí odkaz:
http://arxiv.org/abs/1908.03427
Autor:
Zhang, Wenhao, Bu, Kunliang, Ai, Fangzhou, Wu, Zongxiu, Fei, Ying, Zheng, Yuan, Du, Jianhua, Fang, Minghu, Yin, Yi
Publikováno v:
Phys. Rev. Research 2, 023419 (2020)
Quasiparticle interference (QPI) of the electronic states has been widely applied in scanning tunneling microscopy (STM) to analyze the electronic band structure of materials. Single-defect induced QPI reveals defect-dependent interaction between a s
Externí odkaz:
http://arxiv.org/abs/1907.11596
Publikováno v:
SCIENCE CHINA Physics, Mechanics & Astronomy 63, 227411 (2020)
Electronic charge order is a symmetry breaking state in high-$T_\mathrm{c}$ cuprate superconductors. In scanning tunneling microscopy, the detected charge-order-induced modulation is an electronic response of the charge order. For an overdoped (Bi,Pb
Externí odkaz:
http://arxiv.org/abs/1907.07397