Zobrazeno 1 - 10
of 56
pro vyhledávání: '"Brylinski, Christian"'
Autor:
Jaud, Alexandre, Auvray, Laurent, Kahouli, Abdelkarim, Abi-Tannous, Tony, Linas, Sébastien, Ferro, Gabriel, Brylinski, Christian
Publikováno v:
In Journal of Crystal Growth 1 June 2017 467:18-28
Autor:
Gassoumi, Malek, Bluet, Jean-Marie, Dermoul, Imène, Maaref, Hassen, Guillot, Gérard, Morvan, Erwan, Dua, Christian, Brylinski, Christian
Publikováno v:
In Solid State Electronics 2006 50(2):214-219
Autor:
Ferro, Gabriel, Jaud, Alexandre, Auvray, Laurent, Kahouli, Abdelkarim, Abi-Tannous, Tony, Linas, Sébastien, Brylinski, Christian
Publikováno v:
Journal of Crystal Growth
Journal of Crystal Growth, Elsevier, 2017, 467, pp.18-28. ⟨10.1016/j.jcrysgro.2017.03.018⟩
Journal of Crystal Growth, Elsevier, 2017, 467, pp.18-28. ⟨10.1016/j.jcrysgro.2017.03.018⟩
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::fc4b570a55628feeefc40fc4f991aca1
https://hal.archives-ouvertes.fr/hal-01615173
https://hal.archives-ouvertes.fr/hal-01615173
Autor:
Sejil, Selsabil, Lalouat, Loïc, Lazar, Mihai, Carole, Davy, Brylinski, Christian, Jomard, François, Planson, Dominique, Ferro, Gabriel, Raynaud, Christophe
Publikováno v:
Materials Science Forum
Materials Science Forum, Trans Tech Publications Inc., 2017, 897, pp.63-66. 〈10.4028/www.scientific.net/MSF.897.63〉
Materials Science Forum, Trans Tech Publications Inc., 2017, 897, pp.63-66. ⟨10.4028/www.scientific.net/MSF.897.63⟩
Materials Science Forum, Trans Tech Publications Inc., 2017, 897, pp.63-66. 〈10.4028/www.scientific.net/MSF.897.63〉
Materials Science Forum, Trans Tech Publications Inc., 2017, 897, pp.63-66. ⟨10.4028/www.scientific.net/MSF.897.63⟩
International audience; This study deals with the electrical characterization of PiN diodes fabricated on a 4°off-axis 4H-SiC n+ substrate with a n- epilayer (1×1016 cm-3 / 10 µm). Optimized p++ epitaxial areas were grown by Vapour-Liquid-Solid (V
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::78159666de1a658895f530fdb6178c30
https://hal.archives-ouvertes.fr/hal-01648360
https://hal.archives-ouvertes.fr/hal-01648360
Autor:
Ferro, Gabriel, Jaud, Alexandre, Auvray, Laurent, Kahouli, Abdelkarim, Abi-Tannous, Tony, Cauwet, François, Brylinski, Christian
Publikováno v:
physica status solidi (a)
physica status solidi (a), Wiley, 2017, 214 (4), ⟨10.1002/pssa.201600428⟩
physica status solidi (a), Wiley, 2017, 214 (4), ⟨10.1002/pssa.201600428⟩
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::15f325282729156fd32c218b67a55d44
https://hal.archives-ouvertes.fr/hal-01615198
https://hal.archives-ouvertes.fr/hal-01615198
Autor:
Sejil, Selsabil, Lalouat, Loïc, Lazar, Mihai, Carole, Davy, Brylinski, Christian, Jomard, François, Planson, Dominique, Ferro, Gabriel, Raynaud, Christophe
Publikováno v:
Proceedings of the 2016 European Conference on Silicon Carbide & Related Materials
ECSCRM'16
ECSCRM'16, Sep 2016, Halkidiki, Greece
ECSCRM'16
ECSCRM'16, Sep 2016, Halkidiki, Greece
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::e05591a13c37ba3a2ca39a88f1331d6f
https://hal.archives-ouvertes.fr/hal-02138729/file/cgri61a.pdf
https://hal.archives-ouvertes.fr/hal-02138729/file/cgri61a.pdf
Autor:
Sejil, Selsabil, Lazar, Mihai, Carole, Davy, Brylinski, Christian, Planson, Dominique, Ferro, Gabriel, Raynaud, Christophe
Publikováno v:
Semiconductor Interface Specialists Conference (SISC 2015)
Semiconductor Interface Specialists Conference (SISC 2015), Dec 2015, Arlington, United States
Semiconductor Interface Specialists Conference (SISC 2015), Dec 2015, Arlington, United States
International audience; At present, the most popular technique for the localized P-type doping of 4H-SiC is Al ion implantation. The main drawbacks related to ion implantation are the limited activation of the Al as acceptors and the high amount of r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::7a562f0f1a4a982b533bcc4f4087c38c
https://hal.archives-ouvertes.fr/hal-02428659
https://hal.archives-ouvertes.fr/hal-02428659
Autor:
Sejil, Selsabil, Laariedh, Farah, Lazar, Mihai, Carole, Davy, Brylinski, Christian, Planson, Dominique, Ferro, Gabriel, Raynaud, Christophe, Morel, Hervé
Publikováno v:
Materials Science Forum
Materials Science Forum, Trans Tech Publications Inc., 2015, 821-823, pp.789-792. ⟨10.4028/www.scientific.net/MSF.821-823.789⟩
Materials Science Forum, Trans Tech Publications Inc., 2015, 821-823, pp.789-792. ⟨10.4028/www.scientific.net/MSF.821-823.789⟩
International audience; Lateral JFET transistors have been fabricated with N and P-type channels tentatively integrated monolithically on the same SiC wafer. Buried P+ SiC layers grown by Vapor-Liquid-Solid (VLS) selective epitaxy were utilized as so
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::e03971ca3be4ef60ef2e0a1d56b4faad
https://hal.archives-ouvertes.fr/hal-01387983/file/rev113_hal.pdf
https://hal.archives-ouvertes.fr/hal-01387983/file/rev113_hal.pdf
Akademický článek
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Autor:
Sejil, Selsabil, Laariedh, Farah, Lazar, Mihai, Carole, Davy, Brylinski, Christian, Planson, Dominique, Ferro, Gabriel, Raynaud, Christophe, Morel, Hervé
Publikováno v:
Proceedings of the 2014 European Conference on Silicon Carbide and Related Materials
ECSCRM'14
ECSCRM'14, Sep 2014, Grenoble, France. pp.TU-P-61
ECSCRM'14
ECSCRM'14, Sep 2014, Grenoble, France. pp.TU-P-61
International audience; Lateral JFET transistors have been fabricated with N and P-type channels tentatively integrated monolithically on the same SiC wafer. Buried P+ SiC layers grown by Vapor-Liquid-Solid (VLS) selective epitaxy were utilized as so
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::ff124cea8a6298a45ee53de21d09b132
https://hal.archives-ouvertes.fr/hal-02133686/document
https://hal.archives-ouvertes.fr/hal-02133686/document