Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Bryan R. Jackson"'
Autor:
Evgeny Zlotnikov, Xuemin Chen, Narendra Kumar, Shrimp Frederick L, Geoffrey A. D'netto, Harpal S. Gill, Ying Jiang, Franz J. Weiberth, Duc P. Ngo, Bryan R. Jackson, Lee George E, Frederick Roberts
Publikováno v:
Organic Process Research & Development. 19:806-811
The chemical development of a 2,3-disubstituted 4,7-diazaindole is described. The requisite tertiary carbinol substrate was prepared employing in situ-generated CH3TiCl3 as a chemoselective and preferred reagent compared to CH3MgX for methyl addition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c934d5b0c6420e1788b795030da8fe35
https://doi.org/10.1021/op5003769
https://doi.org/10.1021/op5003769
Publikováno v:
Advanced Materials. 20:1135-1140
Assembly and integration of photonic and electronic building blocks such as semiconductor micro/nanowires into more complex structures is critical to the realization of advanced materials and devices useful for a diverse range of applications.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f84035d9f62e0753467cded8d1c89221
https://doi.org/10.1002/adma.200701569
https://doi.org/10.1002/adma.200701569
Autor:
John V. Badding, Ayusman Sen, Matthew Dirmyer, Bryan R. Jackson, Sachin Borkar, Bin Gu, Roland Delicado
Publikováno v:
Polymer. 47:8337-8343
Polytetrafluoroethylene (PTFE) fluoropolymer exhibits extreme chemical and thermal stability, low friction coefficients and many other exceptional properties. Unfortunately, very high molecular weight PTFE has an extremely high melt viscosity (∼101
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04b16888c159b07ab02496a83de1b3e4
https://doi.org/10.1016/j.polymer.2006.09.069
https://doi.org/10.1016/j.polymer.2006.09.069
Autor:
Adrian Amezcua-Correa, Venkatraman Gopalan, Chris E. Finlayson, Feng Zhang, John R. Hayes, Neil F. Baril, Pier J. A. Sazio, Dongjin Won, T. J. Scheidemantel, Vincent H. Crespi, Elena R. Margine, John V. Badding, Bryan R. Jackson
Publikováno v:
Science. 311:1583-1586
Deposition of semiconductors and metals from chemical precursors onto planar substrates is a well-developed science and technology for microelectronics. Optical fibers are an established platform for both communications technology and fundamental res
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f2c144764b90fede436190250eb30e48
https://doi.org/10.1126/science.1124281
https://doi.org/10.1126/science.1124281
Publikováno v:
Chemistry of Materials. 15:1820-1824
A continuing challenge in understanding the linkage of unsaturated molecules to produce novel networks has been the analysis of the reaction products. Here we report a UV Raman spectroscopic analysis of the amorphous C:H (a-C:H) network formed by com
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a754a53f464842895cb4e7e7b27e483
https://doi.org/10.1021/cm021009y
https://doi.org/10.1021/cm021009y
Publikováno v:
Chemistry of Materials. 13:4187-4191
Deep UV Raman spectroscopy is emerging as a useful tool for the characterization of carbon materials that has many advantages over visible Raman spectroscopy. However, because of resonance enhancement and other effects, UV Raman spectra are often dif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9332126500ac30809ce4a4032071b02a
https://doi.org/10.1021/cm0103186
https://doi.org/10.1021/cm0103186
Autor:
Leonid V. Zhigilei, Bryan R. Jackson, Barbara J. Garrison, Gregory S. Constable, Tracy A. Schoolcraft
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 180:245-250
A series of molecular dynamics (MD) simulations are performed in order to provide qualitative information on the mechanisms of disintegration of aerosol particles as used in aerosol mass spectrometry. Three generic types of aerosol particles are cons
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3628f9d1124f79d284078499d83a8e11
https://doi.org/10.1016/s0168-583x(01)00424-4
https://doi.org/10.1016/s0168-583x(01)00424-4
Autor:
Adrian Amezcua-Correa, Vincent H. Crespi, T. J. Scheidemantel, Bryan R. Jackson, John V. Badding, Elena R. Margine, Chris E. Finlayson, Pier J. A. Sazio, Neil F. Baril, Dongjin Won, John R. Hayes, Venkatraman Gopalan, Feng Zhang
Publikováno v:
2008 IEEE/LEOS Winter Topical Meeting Series.
Functional materials such as bulk crystalline semiconductor structures inside MOF waveguides could lead to fibre devices with radically new electronic and photonic degrees of freedom. We report the growth of such materials inside MOF templates via a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0db4a733fce08ed8eccd251e2cd6888a
https://doi.org/10.1109/leoswt.2008.4444445
https://doi.org/10.1109/leoswt.2008.4444445
Autor:
Chris E. Finlayson, John V. Badding, Bryan R. Jackson, T. J. Scheidemantel, Pier J. A. Sazio, Venkatraman Gopalan, Neil F. Baril, A. Amezcua Correa, D. Wong
Publikováno v:
SPIE Proceedings.
Integration of semiconductor and metal structures into optical fibers to enable fusion of semiconductor optoelectronic function with glass optical fibers is discussed. A chemical vapor deposition (CVD)-like process, adapted for high pressure flow wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f54a1800f9b06c70ee0cbf2d78a42f5
https://doi.org/10.1117/12.700725
https://doi.org/10.1117/12.700725
Autor:
Feng Zhang, Neil F. Baril, Dongjin Won, Chris E. Finlayson, Venkatraman Gopalan, John R. Hayes, Adrian Amezcua-Correa, Bryan R. Jackson, Pier J. A. Sazio, Elena R. Margine, Vincent H. Crespi, John V. Badding, T. J. Scheidemantel
Publikováno v:
2006 European Conference on Optical Communications.
We report the fabrication of semiconductor structures within holey fibres via a pressure driven microfluidic chemical vapour deposition process, demonstrating templated growth of crystalline Group IV semiconductor structures and devices in extreme as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1340e32000d41505353d3f851492c098
https://doi.org/10.1109/ecoc.2006.4801105
https://doi.org/10.1109/ecoc.2006.4801105