Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Bryan Orf"'
Autor:
Ketaki Sarkar, John Lee, William Simpson, Bryan Orf, Laura Treider, David MacMahon, Michael Hurt
Publikováno v:
2023 34th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6754440d146cc6562c8088cedd1215dc
https://doi.org/10.1109/asmc57536.2023.10121070
https://doi.org/10.1109/asmc57536.2023.10121070
Autor:
Georg Erley, Xaver Thrun, Michael Frachel, Lucas Lamonds, Bryan Orf, Boris Habets, Philip Groeger, Alexander Muehle
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXIII.
To reduce defocus from leveling errors at the wafer edge, modern exposure tools offer a broad range of advanced leveling controls. These can be explored fully with minimum experimental effort by simulating alternative set-point curves (z; Rx; Ry) and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a412c3554e4ec62fd27e8b948e45e76
https://doi.org/10.1117/12.2514978
https://doi.org/10.1117/12.2514978
Autor:
Bryan Orf, Georg Erley, Michael Frachel, Alexander Muehle, Boris Habets, Philip Groeger, Xaver Thrun, Lucas Lamonds
Publikováno v:
Journal of Micro/Nanolithography, MEMS, and MOEMS. 18:1
Background: To reduce defocus from leveling errors at the wafer edge, modern exposure tools offer a broad range of advanced leveling controls. These additional degrees of freedom offer better leveling performance, but users hesitate to spend the tool
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::671ee9ef35f3c6892cf60ee616f2bac8
https://doi.org/10.1117/1.jmm.18.4.043505
https://doi.org/10.1117/1.jmm.18.4.043505
Publikováno v:
SPIE Proceedings.
Circuit layout and design rules have continued to shrink to the point where a few nanometers of pattern misalignment can negatively impact process capability and device yields. As wafer processes and film stacks have become more complex, overlay and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd589929ef1a8d2cfd7a14a8dd19d78b
https://doi.org/10.1117/12.2012672
https://doi.org/10.1117/12.2012672