Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Bryan N. Rhoads"'
Autor:
Sumanth Kini, Andrew Stamper, Charu Tejwani, Sang Y. Chong, Carol Boye, Ralf Buengener, Roland Hahn, Bryan N. Rhoads, Sean D. Burns, Kourosh Nafisi, Colin J. Brodsky, S. Fan
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 24:165-172
PWC (Process Window Centering) is an efficient methodology to validate or adjust and center the overall process window for a particular lithography layer by detecting systematic and random defects. The PWC methodology incorporates a defect inspection
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50cfd0b0aee5204dab868442dbd3ea7c
https://doi.org/10.1109/tsm.2011.2106807
https://doi.org/10.1109/tsm.2011.2106807
Autor:
Ralf Buengener, Edward Engbrecht, John Bolton, Geng Han, Bryan N. Rhoads, Praveen Elakkumanan, Jason Gill, Alan L. Roberts, Ishtiaq Ahsan, Karen Holloway, Eden Zielinski, David M. Fried
Publikováno v:
2010 IEEE/SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Back-end-of-line (BEOL) patterning defects on logic circuits are challenging to find and often involve lengthy wafer processing times and costly failure analysis resources to detect. A print-simulation tool was developed to predict patterning fails o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c71d9e13f244468fc369295dda4f73c
https://doi.org/10.1109/asmc.2010.5551469
https://doi.org/10.1109/asmc.2010.5551469
Autor:
Carsten Peters, Stephan Grunow, Bryan N. Rhoads, Tibor Bolom, Sujatha Sankaran, Philip L. Flaitz, Teck Jung Tang, Andrew H. Simon, Brett Baker
Publikováno v:
MRS Proceedings. 1079
We present the results of a systematic benchmarking study, using 45nm-groundrule structures, of a commercially-available ionized PVD Cu technology which employs an in-situ Ar+ radio-frequency (Rf) plasma capability for enhanced coverage, and compare
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3f402b00bafa956f5c2f85070c0a274
https://doi.org/10.1557/proc-1079-n03-04
https://doi.org/10.1557/proc-1079-n03-04