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pro vyhledávání: '"Bryan M Barnes"'
Autor:
Bryan M. Barnes, Mark-Alexander Henn
Publikováno v:
Metrology, Inspection, and Process Control XXXVII.
Autor:
Bryan M. Barnes
Publikováno v:
Modeling Aspects in Optical Metrology VIII.
The semiconductor industry has just recently met the end of “Moore’s Law”, the cyclical reduction in transistor cost observed over several decades. With the smallest dimensions now approaching near-atomic scales, new architectures and materials
Publikováno v:
Modeling Aspects in Optical Metrology VIII.
Publikováno v:
ECS Transactions. 92:73-84
Over the last decade, our group at the National Institute of Standards and Technology (NIST) has explored novel ways to overcome the perceived limitations of applying optical scattering and imaging in the characterization of small silicon features. A
Autor:
Eikhyun Cho, Taekyung Kim, Yoon Sung Bae, Sang-Soo Choi, Bryan M. Barnes, Richard M. Silver, Martin Y. Sohn
Publikováno v:
Optics and Lasers in Engineering. 152:106953
Autor:
Mark-Alexander Henn, Bryan M. Barnes
Publikováno v:
Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV.
The continued extensibility of optical critical dimension (OCD) metrology relies not only upon experimental advances but also upon improved, rigorous data analysis. While often approached using traditional non-linear regression (NLR), the inverse pro
Publikováno v:
Extreme Ultraviolet (EUV) Lithography XI.
Quantum computing has been a long-anticipated emerging computational paradigm to complement and compete with conventional CMOS technologies. The last decade has featured reports of the initial development of using CMOS processing techniques for qubit
Autor:
Bryan M. Barnes, Mark-Alexander Henn
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXIV.
Accurate, optics-based measurement of feature sizes at deep sub-wavelength dimensions has been conventionally challenged by improved manufacturing, including smaller linewidths, denser layouts, and greater materials complexity at near-atomic scales.
Autor:
Regis J. Kline, Mustafa Badaroglu, Benjamin Bunday, Umberto Celano, Mark Neisser, Bryan M. Barnes, Ndubuisi G. Orji, András E. Vladár, Carlos Beitia, Yaw S. Obeng
Publikováno v:
Nature Electronics. 1:532-547
The semiconductor industry continues to produce ever smaller devices that are ever more complex in shape and contain ever more types of materials. The ultimate sizes and functionality of these new devices will be affected by fundamental and engineeri
Publikováno v:
Journal of Power Sources. 364:130-137
Widespread commercialization of proton exchange membrane fuel cells remains curbed by various manufacturing and infrastructure challenges. One such technical barrier identified by the U. S. Department of Energy is the need for high-speed, in-line pro